| 题名 | Full Color Quantum Dot Light-Emitting Diodes Patterned by Photolithography Technology |
| 作者 | |
| 通讯作者 | Chen，Shuming |
| DOI | |
| 发表日期 | 2018
|
| ISSN | 0097-966X
|
| EISSN | 2168-0159
|
| 会议录名称 | |
| 卷号 | 49
|
| 期号 | 1
|
| 页码 | 973-976
|
| 摘要 | Photolithography is a high resolution and mature patterning technique which has been widely used in semiconductor industry. For display application, a pixel consists of red (R), green (G) and blue (B) side-by-side sub-pixels, which thereby requires a high resolution patterning of the light-emission layers. In this work, photolithography is used to fine pattern the quantum dot (QD) light-emitting layers. To prevent the QDs being washed off during the lift-off process, the ZnMgO layer is treated by the hydrophobic material hexamethyldisilazane (HMDS). With HMDS treatment, the adhesion between the QDs and the ZnMgO is effectively improved. As a result, side-by-side RGB QD with pixel size 30 μm × 120 μm is successfully achieved. After patterning, the R, G and B QLEDs exhibit a maximum current efficiency of 11.6 cd/A, 29.7 cd/A and 1.5 cd/A, respectively. |
| 关键词 | |
| 学校署名 | 第一
; 通讯
|
| 语种 | 英语
|
| 相关链接 | [Scopus记录] |
| Scopus记录号 | 2-s2.0-85072110776
|
| 来源库 | Scopus
|
| 引用统计 |
被引频次[WOS]：0
|
| 成果类型 | 会议论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/402806 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China |
| 第一作者单位 | 电子与电气工程系 |
| 通讯作者单位 | 电子与电气工程系 |
| 第一作者的第一单位 | 电子与电气工程系 |
| 推荐引用方式 GB/T 7714 |
Ji，Tingjing,Jin，Shuang,Chen，Bingwei,et al. Full Color Quantum Dot Light-Emitting Diodes Patterned by Photolithography Technology[C],2018:973-976.
|
| 条目包含的文件 | 条目无相关文件。 | |||||
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
;
修改评论