| 题名 | Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS2 homojunction |
| 作者 | |
| 通讯作者 | Liao, Zhimin; Wei, Zhongming |
| 发表日期 | 2022-09-01
|
| DOI | |
| 发表期刊 | |
| ISSN | 1674-4926
|
| 卷号 | 43期号:9 |
| 摘要 | A magnetic semiconductor whose electronic charge and spin can be regulated together will be an important component of future spintronic devices. Here, we construct a two-dimensional (2D) Fe doped SnS2 (Fe-SnS2) homogeneous junction and investigate its electromagnetic transport feature. The Fe-SnS2 homojunction device showed large positive and unsaturated magnetoresistance (MR) of 1800% in the parallel magnetic field and 600% in the vertical magnetic field, indicating an obvious anisotropic MR feature. In contrast, The MR of Fe-SnS2 homojunction is much larger than the pure diamagnetic SnS2 and most 2D materials. The application of a gate voltage can regulate the MR effect of Fe-SnS2 homojunction devices. Moreover, the stability of Fe-SnS2 in air has great application potential. Our Fe-SnS2 homojunction has a significant potential in future magnetic memory applications. |
| 关键词 | |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 其他
|
| 资助项目 | National Key Research and Development Program of China[2017YFA0207500]
; National Natural Science Foundation of China[62125404]
; Strategic Priority Research Program of Chinese Academy of Sciences[XDB43000000]
|
| WOS研究方向 | Physics
|
| WOS类目 | Physics, Condensed Matter
|
| WOS记录号 | WOS:000859471000001
|
| 出版者 | |
| 来源库 | Web of Science
|
| 引用统计 |
被引频次[WOS]：7
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/406063 |
| 专题 | 量子科学与工程研究院 |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 3.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China 4.Peking Univ, Sch Phys, Frontiers Sci Ctr Nanooptoelect, Beijing 100871, Peoples R China 5.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China 6.Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Hunan Key Lab Two Dimens Mat, Changsha 410082, Peoples R China |
| 第一作者单位 | 量子科学与工程研究院 |
| 推荐引用方式 GB/T 7714 |
Fang, Jingzhi,Song, Huading,Li, Bo,et al. Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS2 homojunction[J]. Journal of Semiconductors,2022,43(9).
|
| APA |
Fang, Jingzhi.,Song, Huading.,Li, Bo.,Zhou, Ziqi.,Yang, Juehan.,...&Wei, Zhongming.(2022).Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS2 homojunction.Journal of Semiconductors,43(9).
|
| MLA |
Fang, Jingzhi,et al."Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS2 homojunction".Journal of Semiconductors 43.9(2022).
|
| 条目包含的文件 | 条目无相关文件。 | |||||
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
;
修改评论