南方科技大学知识苑(SUSTech KC): Gate Leakage and Reliability of GaN p-Channel FET with SiNx/GaON Staggered Gate Stack

题名	Gate Leakage and Reliability of GaN p-Channel FET with SiNx/GaON Staggered Gate Stack
作者	Li Zhang 1; Zheyang Zheng 1; Wenjie Song 1; Tao Chen 1; Sirui Feng 1; Junting Chen2 ; Mengyuan Hua2 ; Kevin J. Chen 1
发表日期	2022
DOI	10.1109/LED.2022.3206470
发表期刊	IEEE Electron Device Letters 影响因子和分区
ISSN	1558-0563
卷号	PP 期号:99页码:1-1
关键词	GaN p-channel SiNx/GaON gate stack gate leakage reliability
相关链接	[IEEE记录]
学校署名	其他
ESI学科分类	ENGINEERING
来源库	IEEE
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9889687
引用统计	被引频次[WOS]：5
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/406108
专题	工学院_电子与电气工程系
作者单位	1.Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China 2.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
推荐引用方式 GB/T 7714	Li Zhang,Zheyang Zheng,Wenjie Song,et al. Gate Leakage and Reliability of GaN p-Channel FET with SiNx/GaON Staggered Gate Stack[J]. IEEE Electron Device Letters,2022,PP(99):1-1.
APA	Li Zhang.,Zheyang Zheng.,Wenjie Song.,Tao Chen.,Sirui Feng.,...&Kevin J. Chen.(2022).Gate Leakage and Reliability of GaN p-Channel FET with SiNx/GaON Staggered Gate Stack.IEEE Electron Device Letters,PP(99),1-1.
MLA	Li Zhang,et al."Gate Leakage and Reliability of GaN p-Channel FET with SiNx/GaON Staggered Gate Stack".IEEE Electron Device Letters PP.99(2022):1-1.