A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates control

Zhang，Zhou1,2; Chen，Junxin1,2; Jia，Hao3; Chen，Jianfa1; Li，Feng1,2; Wang，Ximiao1,2; Liu，Shaojing1,2; Ou，Hai1,2; Liu，Song3; Chen，Huanjun1,2; Bie，Ya Qing1,2; Deng，Shaozhi1,2

2022-10-21

10.1016/j.isci.2022.105164

iScience   影响因子和分区

2589-0042

As the limited carrier densities in atomic thin materials can be well controlled by electrostatic gates, p-n junctions based on two-dimensional materials in the coplanar split-gate configuration can work as photodetectors or light-emitting diodes. These coplanar gates can be fabricated in a simple one-step lithography process and are frequently used in hybrid integration with on-chip optical structures. However, the polarization-dependent responsivity of such a configuration is less explored in the near-infrared band, and a clear understanding is still missing. Here we fabricate near-infrared tunable multiple modes twisted bilayer graphene photodetector enabled by the coplanar split-gate control and confirm that the photothermoelectric effect governs the photovoltage mechanism of the p-n junction mode. Our study also elucidates that the discrepancy of the responsivities under different linear polarizations is owing to the different cavity modes and provides a valuable example for designing chip-integrated optoelectronic devices.

Electronic materials Nanomaterials Optical materials

英语

其他

National Key Research and Development Program of China[2020YFA0309300];Natural Science Foundation of Guangdong Province[2021A1515011787];Sun Yat-sen University[22qntd0503];National Natural Science Foundation of China[61974167];

2-s2.0-85139077896

Scopus

1.School of Electronics and Information Technology,Sun Yat-sen University,Guangzhou,510006,China
2.State Key Lab of Optoelectronic Materials and Technologies,Guangdong Province Key Laboratory of Display Material and Technology,Sun Yat-sen University,Guangzhou,510006,China
3.Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Zhang，Zhou,Chen，Junxin,Jia，Hao,et al. A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates control[J]. iScience,2022.

Zhang，Zhou.,Chen，Junxin.,Jia，Hao.,Chen，Jianfa.,Li，Feng.,...&Deng，Shaozhi.(2022).A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates control.iScience.

Zhang，Zhou,et al."A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates control".iScience (2022).