南方科技大学知识苑(SUSTech KC): Inverted Quantum Dot Light-Emitting Diodes with MgZnO Modified Electron Transport Layer

题名	Inverted Quantum Dot Light-Emitting Diodes with MgZnO Modified Electron Transport Layer
作者	Sun，Yizhe 1; Peng，Huiren2 ; Chen，Shuming2 ; Zhang，Shengdong 1
DOI	10.1002/SDTP.11991
发表日期	2017
ISSN	0097-966X
EISSN	2168-0159
会议录名称	Digest of Technical Papers - SID International Symposium
卷号	48
期号	1
页码	1699-1701
摘要	Inverted quantum-dot light-emitting diodes (QLEDs) with high efficiency are demonstrated by utilizing MgZnO modified electron transport layers (ETLs). MgZnO nanoparticles (NPs) with thickness of 10 nm are inserted between ZnO and quantum dots, which reduces the injection of electrons and thus improves the balance of charge injection. Moreover, exciton quenching by ZnO nanoparticles is largely alleviated. Consequently, maximum current efficiency of 11.5 cd/A is achieved and a 36% improvement of external quantum efficiency (EQE) is also obtained in comparison with conventional devices without MgZnO modification layer.
关键词	Electron transport layer Modification layer QLED Quantum dots
学校署名	其他
语种	英语
相关链接	[Scopus记录]
Scopus记录号	2-s2.0-85077789805
来源库	Scopus
引用统计	被引频次[WOS]：0
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/406309
专题	工学院_电子与电气工程系
作者单位	1.Institute of Microelectronics,Peking University,Beijing,China 2.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,China
推荐引用方式 GB/T 7714	Sun，Yizhe,Peng，Huiren,Chen，Shuming,et al. Inverted Quantum Dot Light-Emitting Diodes with MgZnO Modified Electron Transport Layer[C],2017:1699-1701.