| 题名 | Parylene/Al2O3 Double Layer Passivated Amorphous InGaZnO Thin-Film Transistors |
| 作者 | |
| DOI | |
| 发表日期 | 2017
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| ISSN | 0097-966X
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| EISSN | 2168-0159
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| 会议录名称 | |
| 卷号 | 48
|
| 期号 | 1
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| 页码 | 1258-1261
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| 摘要 | Amorphous InGaZnO thin-film transistors (a-IGZO TFTs) passivated by parylene/AlO double layer are fabricated. The parylene layer prevents the channel layer from ion bombardment during AlO sputtering. AlO blocks O and water effectively. It is shown that a-IGZO TFTs with the proposed passivation are stable in the ambient atmosphere. |
| 关键词 | |
| 学校署名 | 其他
|
| 语种 | 英语
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| 相关链接 | [Scopus记录] |
| Scopus记录号 | 2-s2.0-85043528559
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| 来源库 | Scopus
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| 引用统计 |
被引频次[WOS]：0
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| 成果类型 | 会议论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/406311 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | 1.Institute of Microelectronics,Peking University,Beijing,China 2.School of Electronic and Computer Engineering,Peking University,Shenzhen,China 3.Department of Electrical and Electronic Engineering,South University of Science and Technology of China,Shenzhen,China |
| 推荐引用方式 GB/T 7714 |
Zhou，Xiaoliang,Wang，Gang,Shao，Yang,et al. Parylene/Al2O3 Double Layer Passivated Amorphous InGaZnO Thin-Film Transistors[C],2017:1258-1261.
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| 条目包含的文件 | 条目无相关文件。 | |||||
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