On the voltage behavior of quantum dot light-emitting diode

Qu, Xiangwei1,2,3; Ma, Jingrui1,2,3; Liu, Pai1,2,3; Wang, Kai1,2,3; Sun, Xiao Wei1,2,3

2022-10-01

10.1007/s12274-022-5106-8

Nano Research   影响因子和分区

1998-0124

1998-0000

The origin of the efficiency drop of quantum dot light-emitting diode (QLED) under consecutive voltage sweeps is still a puzzle. In this work, we report the voltage sweep behavior of QLED. We observed the efficiency drop of red QLED with ZnMgO electron transport layer (ETL) under consecutive voltage sweeps. In contrast, the efficiency increases for ZnO ETL device. By analyzing the electrical characteristics of both devices and surface traps of ZnMgO and ZnO nanoparticles, we found the efficiency drop of ZnMgO device is related to the hole leakage mediated by trap state on ZnMgO nanoparticles. For ZnO device, the efficiency raise is due to suppressed electron leakage. The hole leakage also causes rapid lifetime degradation of ZnMgO device. However, the efficiency and lifetime degradation of ZnMgO device can be eliminated with shelf aging. Our work reveals the distinct voltage sweep behavior of QLED based on different ETLs and may help to understand the lifetime degradation mechanism in QLED.

quantum dot light-emitting diode voltage sweep behavior efficiency drop hole leakage current

SCI ; EI

英语

第一 ; 通讯

Key-Area Research and Development Program of Guangdong Province["20198010925001","2019B010924001"] ; Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting[2017KSYS007]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000866366100006

TSINGHUA UNIV PRESS

20224212903763

Degradation ; Electron transport properties ; II-VI semiconductors ; Magnesium compounds ; Nanocrystals ; Organic light emitting diodes (OLED) ; Quantum efficiency ; Semiconductor quantum dots ; ZnO nanoparticles

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Chemical Reactions:802.2 ; Quantum Theory; Quantum Mechanics:931.4 ; Crystalline Solids:933.1

Web of Science

1.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Guangdong Hong Kong Macao Joint Lab Photon Therma, Shenzhen Key Lab Adv Quantum Dot Displays & Light, Key Lab Energy Convers & Storage Technol,Minist E, Shenzhen 518055, Peoples R China
3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Qu, Xiangwei,Ma, Jingrui,Liu, Pai,et al. On the voltage behavior of quantum dot light-emitting diode[J]. Nano Research,2022,16(4):5511-5516.

Qu, Xiangwei,Ma, Jingrui,Liu, Pai,Wang, Kai,&Sun, Xiao Wei.(2022).On the voltage behavior of quantum dot light-emitting diode.Nano Research,16(4),5511-5516.

Qu, Xiangwei,et al."On the voltage behavior of quantum dot light-emitting diode".Nano Research 16.4(2022):5511-5516.