题名 | Fabrication of CdSe/ZnS Quantum Dot Color Filters via Photolithography Process |
作者 | |
通讯作者 | Wang,Kai; Sun,Xiao Wei |
DOI | |
发表日期 | 2018
|
ISSN | 0097-966X
|
EISSN | 2168-0159
|
会议录名称 | |
卷号 | 49
|
期号 | S1
|
摘要 | Quantum dots color filter (QDCF) is potential to be a game-changer for display and micro LED industry. In this paper, highly fluorescent QDCF have been prepared by changing surface active ligand of CdSe@ZnS to nonreactive ligand for photolithographic patterning. The quantum dots (QDs) with inactivated ligand avoids chemical reaction during the photolithography process. The 4 μm thickness QDCF with 28.8% (red) absolute PL quantum yield ( λmax of 630.16 nm) has been achieved after the photolithograpy process, while the QDs with surface active sites failed to form a patterned film. This may be due to the coordination of activated bonds with photoresist and the occurrence of complexation reaction. |
关键词 | |
学校署名 | 通讯
|
语种 | 英语
|
相关链接 | [Scopus记录] |
Scopus记录号 | 2-s2.0-85121546210
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:0
|
成果类型 | 会议论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/406936 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Department of Electrical & Electronic Engineering,Southern University of Science and Technology,Shenzhen,China 2.Tsinghua University,Beijing,China |
通讯作者单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Zhao,Bingxin,Lu,Rui,Hao,Junjie,et al. Fabrication of CdSe/ZnS Quantum Dot Color Filters via Photolithography Process[C],2018.
|
条目包含的文件 | 条目无相关文件。 |
|
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论