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题名

Low Efficiency Attenuation and Stable Monochromaticity for Non-Polar m-Plane Micro-Ligh-Emitting-Diodes (Micro-LEDs)

作者
DOI
发表日期
2022
会议名称
59th International Symposium, Seminar and Exhibition, Display Week 2022
ISSN
0097-966X
EISSN
2168-0159
会议录名称
卷号
53
页码
541-544
会议日期
May 8, 2022 - May 13, 2022
会议地点
San Jose, CA, United states
出版者
摘要
In this paper, the gallium nitride (GaN) free-standing non-polar m-plane micro-LEDs and polar c-plane micro-LEDs on patterned sapphire substrate with a 550-nm emission light were fabricated and characterized. Compared with c-plane micro- LEDs suffering from strong quantum confined stark effect (QCSE), the absence of polarization effect in m-plane devices contributed to a lower efficiency attenuation and narrower peak and color shift with elevating current density. Specifically, the peak wavelength shift for c-plane and m-plane micro-LEDs was 81 nm and 8.12 nm respectively from 1 to 500 A/cm2, and the efficiency droop ratio was 50.2% for c-plane and 27.2% for m- plane devices from 0.1 to 300 A/cm2. Importantly, our m-plane micro-LEDs achieved a stable monochromaticity and wider color gamut under different injection current density (97.9% and 98.2% of Rec. 2020 at 1 and 500 A/cm2).
© 2022 SID.
学校署名
其他
语种
英语
收录类别
EI入藏号
20223312556923
EI主题词
Gallium nitride ; III-V semiconductors ; Light emitting diodes ; Sapphire
EI分类号
Gems:482.2.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Production Engineering:913.1
来源库
EV Compendex
引用统计
被引频次[WOS]:0
成果类型会议论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/411571
专题南方科技大学
作者单位
1.Hong Kong University of Science and Technology, Hong Kong
2.Southern University of Science and Technology, Shenzhen, China
3.Shenzhen Sitan Technology Co. Ltd, Shenzhen, China
推荐引用方式
GB/T 7714
Liu, Yibo,Feng, Feng,Zhang, Ke,et al. Low Efficiency Attenuation and Stable Monochromaticity for Non-Polar m-Plane Micro-Ligh-Emitting-Diodes (Micro-LEDs)[C]:John Wiley and Sons Inc,2022:541-544.
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