南方科技大学知识苑(SUSTech KC): Ultra-low Specific Contact Resistivity (3.2×10-10 Ω-cm2) of Ti/Si0.5Ge0.5 Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping

题名	Ultra-low Specific Contact Resistivity (3.2×10-10 Ω-cm2) of Ti/Si0.5Ge0.5 Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping
作者	Xu, Haiwen 1; Wang, Xinke 1; Luo, Sheng 1; Zhang, Jishen 1; Han, Kaizhen 1; Sun, Chen 1; Wang, Chengkuan 1; Khazaka, Rami 2; Xie, Qi 2; Huang, Yi3 ; Zhou, Yi 1; He, Jiaqing3 ; Liang, Gengchiau 1; Gong, Xiao 1
通讯作者	Gong, Xiao
发表日期	2021
会议名称	41st Symposium on VLSI Technology, VLSI Technology 2021
ISSN	0743-1562
ISBN	9784863487802
会议录名称	Digest of Technical Papers - Symposium on VLSI Technology
卷号	2021-June
页码	1-2
会议日期	June 13, 2021 - June 19, 2021
会议地点	Virtual, Online, Japan
会议录编者/会议主办者	IEEE Electron Devices Society; Japan Society of Applied Physics
出版者	Institute of Electrical and Electronics Engineers Inc.
摘要	We report an ultra-low specific contact resistivity (ρc) down to 3.2×10^-10 Ω-cm² on in-situ grown boron (B) and surface segregated gallium (Ga) co-doped p⁺-Si0.5Ge0.5 with a high average active doping concentration (NA) of 1.2×10²¹ cm^-3. Two batches of devices with 8 sets of data using ladder transmission line model (LTLM) were fabricated to confirm the accuracy. We also found, for the first time, that the co-doped Ga not only enhances NA but also plays a vital role in achieving thermally stable Ti/p⁺-Si0.5Ge0.5 contacts with the thermal budget of up to 450 ℃. A mechanism for the deep understanding of such phenomenon was proposed and experimentally verified. © 2021 JSAP
关键词	SiGe specific contact resistivity in-situ doping Ga and B co-doping interface reaction
学校署名	其他
语种	英语
相关链接	[IEEE记录]
收录类别	EI
资助项目	The authors acknowledge support from MOE Tier 2 grant (MOE T2-1-137).
EI入藏号	20220911735775
EI主题词	Gallium ; Semiconductor Doping ; Si-Ge Alloys ; Silicon
EI分类号	Nonferrous Metals And Alloys Excluding Alkali And Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1
来源库	EV Compendex
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9508651
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/411701
专题	南方科技大学
作者单位	1.Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore 2.ASM, Belgium, Kapeldreef 75, Leuven; 3001, Belgium 3.Pico Center, Southern University of Science and Technology, Shenzhen, China
推荐引用方式 GB/T 7714	Xu, Haiwen,Wang, Xinke,Luo, Sheng,et al. Ultra-low Specific Contact Resistivity (3.2×10-10 Ω-cm2) of Ti/Si0.5Ge0.5 Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping[C]//IEEE Electron Devices Society; Japan Society of Applied Physics:Institute of Electrical and Electronics Engineers Inc.,2021:1-2.