GaN HEMT-LED Homogeneous Integration for Micro-LED Mass Transferring

Liu，Yibo2; Wei，Feng2; Lu，Tao2; Liu，Zhaojun1

10.1002/SDTP.12808

2018

0097-966X

2168-0159

Digest of Technical Papers - SID International Symposium

49

S1

660-664

Mass transfer is transferring a number of Micro-LED pixels from the original substrate to target backplane, which aims to provide electrical connection and mechanical support for Micro-LED pixels. Mass transfer technology plays a crucial role in Micro-LED displays. For Micro-LED displays larger than 2 inches, such as mobile phone and camera (2~7 inches), Pad and Laptop (7~15 inches), television (larger than 15 inches), mass transfer is a significant process in fabrication process. Unfortunately, mass transfer has become a bottleneck restricting the development of the Micro-LED commercialization. There are many technology routes to solve (or to avoid) the problem of mass transfer. In this experiment, we review several methods of GaN HEMT-LED monolithic integration to provide better electrical connection and mechanical support of Micro-LEDs. As the third-generation semiconductor, then we choose a model to do simulation by using Silvaco. GaN can be used as high-quality LED and HEMT, especially the mobility of GaN HEMT is more than 2000cm2/V. S, which higher hundreds of times than Si transistor or TFT (Thin Film Transistor). HEMT-LED monolithic integration can greatly improve the driving performance, save pixel area, improve pixel density, but also can avoid the problem of electrical connection in the mass transfer.

HEMT-LED high electron mobility transistors(HEMT) Homogeneously Integration light emitting diode(LED) Mass transfer Micro-LED

其他

英语

2-s2.0-85093364083

Scopus

1.Southern University of Science and Technology,Shenzhen,China
2.

Liu，Yibo,Wei，Feng,Lu，Tao,et al. GaN HEMT-LED Homogeneous Integration for Micro-LED Mass Transferring[C],2018:660-664.