Molecular dynamics simulation of laser assisted grinding of GaN crystals

Li，Chen1,2; Hu，Yuxiu2; Zhang，Feihu1,2; Geng，Yanquan1,2; Meng，Binbin3

2023-02-01

10.1016/j.ijmecsci.2022.107856

INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES   影响因子和分区

0020-7403

1879-2162

Gallium nitride crystal is a typical difficult-to-machine material due to its distinct anisotropy, high brittleness, and high hardness. The molecular dynamics simulations of traditional grinding and laser assisted grinding of GaN single crystals with a single grit were performed, and the influences of the laser power density on grinding force, stress distribution, material damage mechanism, subsurface damage depth, and abrasive wear were systematically studied. The results demonstrated that dislocations, stacking faults, hexagonal-to-cubic phase transition, and amorphous transition were generated during both traditional grinding and laser assisted grinding processes. Compared with the traditional grinding, laser assisted grinding with an appropriate laser power density reduced the grinding force, stress distribution, phase transition percentage, dislocation loop length, subsurface damage depth, and wear damage of the abrasive. However, excessive laser power densities caused deeper subsurface damage depth and severer amorphous damage for the rake face of the abrasive particle, which seriously deteriorated the integrity of the ground surface and subsurface. The results not only enhance the understanding of material removal and damages under the coupling actions of the laser and abrasive machining, but also provide a theoretical basis for parameter optimization during the machining of GaN single crystals.

Gallium nitride crystal Laser assisted grinding Molecular dynamics Phase transition Single-grit Subsurface damage

SCI ; EI

英语

ESI热点 ; ESI高被引

其他

China Postdoctoral Science Foundation[2020M670901];China Postdoctoral Science Foundation[2022T150163];National Natural Science Foundation of China[51905254];National Natural Science Foundation of China[52005134];Fundamental Research Funds for the Central Universities[FRFCU5710051122];State Key Laboratory of Robotics and System[SKLRS-2022-ZM-14];

Engineering ; Mechanics

Engineering, Mechanical ; Mechanics

WOS:000890640900001

PERGAMON-ELSEVIER SCIENCE LTD

20224713155682

Fracture mechanics ; Gallium nitride ; Grinding (machining) ; III-V semiconductors ; Single crystals ; Stress concentration

Machining Operations:604.2 ; Semiconducting Materials:712.1 ; Physical Chemistry:801.4 ; Mechanics:931.1 ; Crystalline Solids:933.1

ENGINEERING

2-s2.0-85142192640

Scopus

1.State Key Laboratory of Robotics and System (HIT),Harbin Institute of Technology,Harbin,150001,China
2.School of Mechatronics Engineering,Harbin Institute of Technology,Harbin,150001,China
3.Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Li，Chen,Hu，Yuxiu,Zhang，Feihu,et al. Molecular dynamics simulation of laser assisted grinding of GaN crystals[J]. INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES,2023,239.

Li，Chen,Hu，Yuxiu,Zhang，Feihu,Geng，Yanquan,&Meng，Binbin.(2023).Molecular dynamics simulation of laser assisted grinding of GaN crystals.INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES,239.

Li，Chen,et al."Molecular dynamics simulation of laser assisted grinding of GaN crystals".INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES 239(2023).