Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering

Lu，Honghao1; Wen，Kangyao3; Du，Fangzhou1; Tang，Chuying1; Cheng，Wei Chih1; Wei，Bowen1; Li，Honglin1; Wang，Qing1,2; Yu，Hongyu1,2

2023-02-01

10.1016/j.mssp.2022.107221

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   影响因子和分区

1369-8001

1873-4081

In this study, magnetron reactive sputtering using a copper oxide target was performed to obtain a series of high-quality CuO films with high hole concentration. The results of X-ray photoelectron spectroscopy and Hall measurements revealed that the hole concentration exhibited a negative correlation to the Cu to Cu ratio in the p-type CuO film. This phenomenon indicated that the hole concentration can be modulated by adjusting film deposition conditions. Considering the high hole concentration and fine surface quality, these CuO films were used as p-type gates without gate etching and positively shifted the threshold voltage (V) of AlGaN/GaN high-electron-mobility transistors (HEMTs). This study is the first to achieve quasi-normally off GaN HEMTs using CuO gates, in which V positively shifted approximately 2.5 V and reached 0.5 V. Because of the excellent surface quality of the CuO gate, the off-state current and gate leakage current of GaN HEMTs improved considerably. This study verified that CuO is a promising gate candidate for fabricating low-cost, normally off AlGaN/GaN HEMTs.

GaN HEMTs Hole concentration Normally off p-type CuOx gate Threshold voltage

SCI ; EI

英语

第一 ; 通讯

National Natural Science Foundation of China[62274082];Science, Technology and Innovation Commission of Shenzhen Municipality[JCYJ20200109141233476];Science, Technology and Innovation Commission of Shenzhen Municipality[JCYJ20210324120409025];Science, Technology and Innovation Commission of Shenzhen Municipality[JCYJ20220530115411025];

Engineering ; Materials Science ; Physics

Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000908381500005

ELSEVIER SCI LTD

20224713150467

Aluminum gallium nitride ; Copper oxides ; Electron mobility ; Etching ; Gallium nitride ; High electron mobility transistors ; Hole concentration ; III-V semiconductors ; Leakage currents ; Oxide films ; Semiconductor doping ; Surface properties ; X ray photoelectron spectroscopy

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Materials Science:951

MATERIALS SCIENCE

2-s2.0-85142176334

Scopus

1.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China
2.Engineering Research Center of Integrated Circuits for Next-Generation Communications,Ministry of Education,Southern University of Science and Technology,Shenzhen,518055,China
3.School of Microelectronics,Fudan University,Shanghai,200433,China

Lu，Honghao,Wen，Kangyao,Du，Fangzhou,et al. Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2023,154.

Lu，Honghao.,Wen，Kangyao.,Du，Fangzhou.,Tang，Chuying.,Cheng，Wei Chih.,...&Yu，Hongyu.(2023).Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,154.

Lu，Honghao,et al."Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 154(2023).