Study of the humidity-controlled CeO2 fixed-abrasive chemical mechanical polishing of a single crystal silicon wafer

Li，Gengzhuo1; Xiao，Chen1,2; Zhang，Shibo1,3; Luo，Shengquan1; Chen，Yuhan1; Wu，Yongbo1

2023-02-01

10.1016/j.triboint.2022.108087

TRIBOLOGY INTERNATIONAL   影响因子和分区

0301-679X

1879-2464

To address the problem of low polishing efficiency in traditional loose-abrasive chemical mechanical polishing, a humidity-controlled fixed-abrasive chemical mechanical polishing method is proposed, which uses a CeO pellet to perform polishing at a specific humidity level. The results of both the nano-scratch tests and the fixed-abrasive polishing experiments demonstrate that the water molecules have an irreplaceable role in the material removal of silicon and that a higher ambient humidity results in better material removal. Fixed-abrasive polishing experiments under saturated humidity can yield a surface roughness less than Ra 2 nm at an efficiency of 0.9 µm/h, and the minimum stress on the polished surface is only a few tens of megapascals. The method is validated to be effective for the stress relief process after grinding.

Chemical mechanical polishing Fixed-abrasive polishing Tribochemical polishing Ultra-thin wafer

SCI ; EI

英语

第一 ; 通讯

National Natural Science Foundation of China[51975269];

Engineering

Engineering, Mechanical

WOS:000928187500003

ELSEVIER SCI LTD

20224813199249

Chemical mechanical polishing ; Efficiency ; Humidity control ; Molecules ; Silicon wafers ; Single crystals ; Stress relief ; Surface roughness

Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2 ; Production Engineering:913.1 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Atomic and Molecular Physics:931.3 ; Crystalline Solids:933.1

ENGINEERING

2-s2.0-85142892636

Scopus

1.Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,518055,China
2.Advanced Research Center for Nanolithography (ARCNL),Amsterdam,Science Park 106,1098XG,Netherlands
3.School of Mechatronics Engineering,Harbin Institute of Technology,Harbin,Heilongjiang,150000,China

Li，Gengzhuo,Xiao，Chen,Zhang，Shibo,et al. Study of the humidity-controlled CeO2 fixed-abrasive chemical mechanical polishing of a single crystal silicon wafer[J]. TRIBOLOGY INTERNATIONAL,2023,178.

Li，Gengzhuo,Xiao，Chen,Zhang，Shibo,Luo，Shengquan,Chen，Yuhan,&Wu，Yongbo.(2023).Study of the humidity-controlled CeO2 fixed-abrasive chemical mechanical polishing of a single crystal silicon wafer.TRIBOLOGY INTERNATIONAL,178.

Li，Gengzhuo,et al."Study of the humidity-controlled CeO2 fixed-abrasive chemical mechanical polishing of a single crystal silicon wafer".TRIBOLOGY INTERNATIONAL 178(2023).