Junction-Enhanced Polarization Sensitivity in Self-Powered Near-Infrared Photodetectors Based on Sb2Se3 Microbelt/n-GaN Heterojunction

Wan，Peng1; Jiang，Mingming1; Wei，Yun1; Xu，Tong1; Liu，Yang1; Xia，Sihao1; Su，Longxing2; Shi，Daning1; Fang，Xiaosheng3; Kan，Caixia1

2022

10.1002/adom.202202080

Advanced Optical Materials   影响因子和分区

2195-1071

2195-1071

Polarization-sensitive photodetectors (PDs) based on anisotropic materials spark considerable interest for their potential applications in security surveillance, optical switches, and remote sensing. However, high-thickness or bulk anisotropic materials generally exhibit low polarization sensitivity, hindering their practical applications in polarization photodetection. Herein, a near-infrared (NIR) PD based on a p-type SbSe microbelt (MB)/n-GaN heterojunction is proposed. The SbSe MB/GaN PD effectively combines the anisotropy of the SbSe MB with the heterogeneous integration. The PD presents self-powered detection properties with a responsivity over 12 mA W, a specific detectivity exceeding 5 × 10 Jones, and a response speed (the rising/decaying times ≈74 ms/75 ms) under NIR illumination. More importantly, the heterojunction-based PD has a higher anisotropy ratio of 1.37, which is 1.3 times amplified as compared to the vertical photoconductive-type PDs (the anisotropy ratio of 1.06). The p-n junction's effect on carrier generation and recombination causes the increased polarization sensitivity of SbSe MB/GaN PDs, as confirmed by finite element method analysis. This work not only offers a deeper insight into polarization sensitivity regulated by junction or interface but also provides a practical method for developing high-sensitivity polarization detectors based on high-thickness or bulk anisotropic materials.

anisotropic materials near-infrared polarization-sensitive detection Sb 2Se 3/GaN heterojunction self-powered photodetectors

SCI ; EI

英语

其他

National Natural Science Foundation of China["11974182","11874220"] ; Funding for Outstanding Doctoral Dissertation in NUAA[BCXJ22-14]

Materials Science ; Optics

Materials Science, Multidisciplinary ; Optics

WOS:000892401600001

WILEY-V C H VERLAG GMBH

20224913210722

Antimony compounds ; Gallium compounds ; Infrared devices ; Optical anisotropy ; Optical remote sensing ; Optical switches ; Photodetectors ; Photons ; Polarization ; Selenium compounds

Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Atomic and Molecular Physics:931.3

2-s2.0-85143203827

Scopus

1.College of Physics,MIIT Key Laboratory of Aerospace Information Materials and Physics,Key Laboratory for Intelligent Nano Materials and Devices,Nanjing University of Aeronautics and Astronautics,Nanjing,211106,China
2.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China
3.State Key Laboratory of Molecular Engineering of Polymers,Department of Materials Science,Fudan University,Shanghai,200433,China

Wan，Peng,Jiang，Mingming,Wei，Yun,et al. Junction-Enhanced Polarization Sensitivity in Self-Powered Near-Infrared Photodetectors Based on Sb2Se3 Microbelt/n-GaN Heterojunction[J]. Advanced Optical Materials,2022,11(3).

Wan，Peng.,Jiang，Mingming.,Wei，Yun.,Xu，Tong.,Liu，Yang.,...&Kan，Caixia.(2022).Junction-Enhanced Polarization Sensitivity in Self-Powered Near-Infrared Photodetectors Based on Sb2Se3 Microbelt/n-GaN Heterojunction.Advanced Optical Materials,11(3).

Wan，Peng,et al."Junction-Enhanced Polarization Sensitivity in Self-Powered Near-Infrared Photodetectors Based on Sb2Se3 Microbelt/n-GaN Heterojunction".Advanced Optical Materials 11.3(2022).