Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically-Thin Tungsten Disulfides

Wang，Qun1; Wang，Shi2; Li，Jingyi1; Gan，Yichen1; Jin，Mengtian1; Shi，Run1; Amini，Abbas3; Wang，Ning2; Cheng，Chun1,4

2022

10.1002/advs.202205638

Advanced Science   影响因子和分区

2198-3844

Chemical vapor deposition (CVD) has been widely used to produce high quality 2D transitional metal dichalcogenides (2D TMDCs). However, violent evaporation and large diffusivity discrepancy of metal and chalcogen precursors at elevated temperatures often result in poor regulation on X:M molar ratio (M = Mo, W etc.; X = S, Se, and Te), and thus it is rather challenging to achieve the desired products of 2D TMDCs. Here, a modified spatially confined strategy (MSCS) is utilized to suppress the rising S vapor concentration between two aspectant substrates, upon which the lateral/vertical growth of 2D WS can be selectively regulated via proper S:W zones correspond to greatly broadened time/growth windows. An S:W-time (SW-T) growth diagram was thus proposed as a mapping guide for the general understanding of CVD growth of 2D WS and the design of growth routes for the desired 2D WS. Consequently, a comprehensive growth management of atomically thin WS is achieved, including the versatile controls of domain size, layer number, and lateral/vertical heterostructures (MoS-WS). The lateral heterostructures show an enhanced hydrogen evolution reaction performance. This study advances the substantial understanding to the growth kinetics and provides an effective MSCS protocol for growth design and management of 2D TMDCs.

atomically-thin tungsten disulfide chemical vapor deposition growth kinetics molybdenum/sulfur molar ratio-time growth diagram spatially confined growth

SCI ; EI

英语

第一 ; 通讯

National Natural Science Foundation of China[91963129] ; Guangdong Provincial Key Laboratory of Energy Materials for Electric Power[2018B030322001] ; Basic Research Project of Science and Technology Plan of Shenzhen[JCYJ20180504165655180] ; special Funds for the Cultivation of Guangdong College Students' Scientific and Technological Innovation["pdjh2022c0003","pdjh2022c0005"] ; Southern University of Science and Technology (SUSTech)["2022G01","2022G02"]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000891953800001

WILEY

20224913199945

Chemical vapor deposition ; Flowcharting ; Growth kinetics ; Kinetics ; Layered semiconductors ; Molar ratio ; Molybdenum compounds ; Tungsten compounds

Fluid Flow, General:631.1 ; Semiconducting Materials:712.1 ; Computer Programming:723.1 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Classical Physics; Quantum Theory; Relativity:931

2-s2.0-85142933754

Scopus

1.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
2.Department of Physics and Center for Quantum Materials,Hong Kong University of Science and Technology,Hong Kong
3.Center for Infrastructure Engineering,Western Sydney University,Kingswood,2751,Australia
4.Guangdong Provincial Key Laboratory of Energy Materials for Electric Power,Southern University of Science and Technology,Shenzhen,518055,China

Wang，Qun,Wang，Shi,Li，Jingyi,et al. Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically-Thin Tungsten Disulfides[J]. Advanced Science,2022,10(3).

Wang，Qun.,Wang，Shi.,Li，Jingyi.,Gan，Yichen.,Jin，Mengtian.,...&Cheng，Chun.(2022).Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically-Thin Tungsten Disulfides.Advanced Science,10(3).

Wang，Qun,et al."Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically-Thin Tungsten Disulfides".Advanced Science 10.3(2022).