Transparent, Flexible, Fatigue-Free, Optical-Read, and Nonvolatile Ferroelectric Memories

Gao, Huan1; Yang, Yuxi1; Wang, Yaojin1; Chen, Lang2; Wang, Junling3,4; Yuan, Guoliang1; Liu, Jun-Ming5,6

2019-09-25

10.1021/acsami.9b14095

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

1944-8252

Perovskite oxide films are widely used in various commercial industries. However, they are usually prepared at high temperature and in oxygen ambience, detrimental to most transparent and flexible substrates and bottom conductive electrodes such as indium tin oxide (ITO). It remains challenging to integrate perovskite oxides into transparent and flexible electronics. Here, the 1.2 wt % Ag-doped ITO (Ag-ITO) grown on a mica substrate is employed as the bottom electrode, which can withstand high temperature and repeated bending, and then we achieve the transparent, flexible, fatigue-free, and optical-read ferroelectric nonvolatile memories based on the mica/Ag-ITO/Bi3.25La0.75Ti3O12/ITO structures. The as-prepared memories show similar to 80% transmittance for visible lights and fatigue-free performance after more than 10(8) writing/erasing cycles. These performances are stable after repeated bending down to 3 mm in a curvature radius. More importantly, the "1/0" state of the memory can be read out by the photovoltaic current rather than destructive polarization switching, an emergent functionality for many applications. This work substantially promotes the applications of perovskite oxide films in transparent and flexible electronics, including wearable devices.

inorganic memories transparent flexible fatigue-free optical-read

SCI ; EI

英语

其他

National Key Research Program of China[2016YFA0300101]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000488322900065

AMER CHEMICAL SOC

20194107505917

Electrodes ; Ferroelectricity ; Film preparation ; Indium compounds ; Mica ; Oxide films ; Perovskite ; Substrates ; Thermal fatigue ; Tin oxides ; Wearable technology

Minerals:482.2 ; Electricity: Basic Concepts and Phenomena:701.1 ; Electronic Equipment, General Purpose and Industrial:715 ; Inorganic Compounds:804.2 ; Materials Science:951

Web of Science

1.Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Nanjing 210094, Jiangsu, Peoples R China
2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
3.Southern Univ Sci & Technol, Acad Adv Interdisciplinary Studies, Shenzhen 518055, Peoples R China
4.Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
5.Nanjing Univ, Innovat Ctr Adv Microstruct, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
6.South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China

Gao, Huan,Yang, Yuxi,Wang, Yaojin,et al. Transparent, Flexible, Fatigue-Free, Optical-Read, and Nonvolatile Ferroelectric Memories[J]. ACS Applied Materials & Interfaces,2019,11(38):35169-35176.

Gao, Huan.,Yang, Yuxi.,Wang, Yaojin.,Chen, Lang.,Wang, Junling.,...&Liu, Jun-Ming.(2019).Transparent, Flexible, Fatigue-Free, Optical-Read, and Nonvolatile Ferroelectric Memories.ACS Applied Materials & Interfaces,11(38),35169-35176.

Gao, Huan,et al."Transparent, Flexible, Fatigue-Free, Optical-Read, and Nonvolatile Ferroelectric Memories".ACS Applied Materials & Interfaces 11.38(2019):35169-35176.