Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications

Zhao, Liyun1; Gao, Yan1,3; Su, Man1; Shang, Qiuyu1; Liu, Zhen1; Li, Qi1,3; Wei, Qi4; Li, Meili1; Fu, Lei2; Zhong, Yangguang5; Shi, Jia5; Chen, Jie5; Zhao, Yue6,7; Qiu, Xiaohui5; Liu, Xinfeng5; Tang, Ning2; Xing, Guichuan4; Wang, Xina3; Shen, Bo2; Zhang, Qing1

2019-09

10.1021/acsnano.9b02885

ACS Nano   影响因子和分区

1936-0851

1936-086X

Integrating metallic halide perovskites with established modern semiconductor technology is significant for promoting the development of application-level optoelectronic devices. To realize such devices, exploring the growth dynamics and interfacial carrier dynamics of perovskites deposited on the core materials of semiconductor technology is essential. Herein, we report the incommensurate heteroepitaxy of highly oriented single-crystal cesium lead bromide (CsPbBr3) on c-wurtzite GaN/sapphire substrates with atomically smooth surface and uniform rectangular shape by chemical vapor deposition. The CsPbBr3 microplatelet crystal exhibits green-colored lasing under room temperature and has a structural stability comparable with that grown on van der Waals mica substrates. Time-resolved photoluminescence spectroscopy studies show that the type-II CsPbBr3-GaN heterojunction effectively enhances the separation and extraction of free carriers inside CsPbBr3. These findings provide insights into the fabrication and application-level integrated optoelectronic devices of CsPbBr3 perovskites.

cesium lead bromide perovskite incommensurate epitaxy vapor-phase deposition lasing gallium nitride

SCI ; EI

英语

NI期刊

其他

China Postdoctoral Science Foundation[2019M653721]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000487859600030

AMER CHEMICAL SOC

20193907470471

Bromine compounds ; Cesium compounds ; Chemical vapor deposition ; Chromium compounds ; Coremaking ; Epitaxial growth ; Gallium nitride ; Heterojunctions ; III-V semiconductors ; Integrated optoelectronics ; Mica ; Perovskite ; Photoluminescence spectroscopy ; Single crystals ; Stability ; Substrates ; Van der Waals forces ; Wide band gap semiconductors ; Zinc sulfide

Minerals:482.2 ; Foundry Practice:534.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Chemical Operations:802.3 ; Inorganic Compounds:804.2 ; Crystalline Solids:933.1 ; Crystal Growth:933.1.2

Web of Science

1.Peking Univ, Sch Phys, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
2.Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
3.Hubei Univ, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Hubei Key Lab Ferro & Piezoelect Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Hubei, Peoples R China
4.Univ Macau, Inst Appl Phys & Mat Engn, Minist Educ, Joint Key Lab, Macau 999078, Peoples R China
5.Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China
6.Southern Univ Sci & Technol, Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
7.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China

Zhao, Liyun,Gao, Yan,Su, Man,et al. Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications[J]. ACS Nano,2019,13(9):10085-10094.

Zhao, Liyun.,Gao, Yan.,Su, Man.,Shang, Qiuyu.,Liu, Zhen.,...&Zhang, Qing.(2019).Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications.ACS Nano,13(9),10085-10094.

Zhao, Liyun,et al."Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications".ACS Nano 13.9(2019):10085-10094.