A 157.8-166.3GHz Fundamental Oscillator Achieving -181.9dBc/Hz FoM in 65nm CMOS

This letter presents a sub-terahertz fundamental oscillator using a magnetic tuning technique and drain-to-source transformer feedback to extend the tuning range and enhance the output power. Realized in a 65-nm CMOS process, the proposed prototype operates above f(max)/2 and achieves a frequency tuning range from 157.8 to 166.3 GHz with a phase noise of -105 dBc/Hz at 10-MHz offset, a dc-to-RF efficiency of 2.1%, and a power consumption of 5.6 mW, corresponding to an figure of merit (FoM) of -181.9 dBc/Hz.