Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties

Cai, Zhengyang1; Shen, Tianze2; Zhu, Qi3,4; Feng, Simin1; Yu, Qiangmin1; Liu, Jiaman1; Tang, Lei1; Zhao, Yue2; Wang, Jiangwei3,4; Liu, Bilu1; Cheng, Hui-Ming1,5

2019-10-02

10.1002/smll.201903181

Small   影响因子和分区

1613-6810

1613-6829

Doping of bulk silicon and III-V materials has paved the foundation of the current semiconductor industry. Controlled doping of 2D semiconductors, which can also be used to tune their bandgap and type of carrier thus changing their electronic, optical, and catalytic properties, remains challenging. Here the substitutional doping of nonlike element dopant (Mn) at the Mo sites of 2D MoS2 is reported to tune its electronic and catalytic properties. The key for the successful incorporation of Mn into the MoS2 lattice stems from the development of a new growth technology called dual-additive chemical vapor deposition. First, the addition of a MnO2 additive to the MoS2 growth process reshapes the morphology and increases lateral size of Mn-doped MoS2. Second, a NaCl additive helps in promoting the substitutional doping and increases the concentration of Mn dopant to 1.7 at%. Because Mn has more valance electrons than Mo, its doping into MoS2 shifts the Fermi level toward the conduction band, resulting in improved electrical contact in field effect transistors. Mn doping also increases the hydrogen evolution activity of MoS2 electrocatalysts. This work provides a growth method for doping nonlike elements into 2D MoS2 and potentially many other 2D materials to modify their properties.

doping dual-additive chemical vapor deposition electronic properties field effect transistors hydrogen evolution reaction MoS2

SCI ; EI

英语

其他

Shenzhen Basic Research Project[JCYJ20170307140956657]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000488405900001

WILEY-V C H VERLAG GMBH

20194407595626

Molybdenum oxide ; Electronic properties ; Molybdenum ; Layered semiconductors ; Manganese oxide ; Semiconductor device manufacture ; Sodium chloride ; Electrocatalysts ; Hydrogen ; Chemical vapor deposition ; Semiconductor doping

Molybdenum and Alloys:543.3 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Reactions:802.2 ; Chemical Agents and Basic Industrial Chemicals:803 ; Chemical Products Generally:804

Web of Science

1.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, Shenzhen 518055, Guangdong, Peoples R China
2.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
3.Zhejiang Univ, Sch Mat Sci & Engn, Ctr Electron Microscopy, Hangzhou 310027, Zhejiang, Peoples R China
4.Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China

Cai, Zhengyang,Shen, Tianze,Zhu, Qi,et al. Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties[J]. Small,2019,16.

Cai, Zhengyang.,Shen, Tianze.,Zhu, Qi.,Feng, Simin.,Yu, Qiangmin.,...&Cheng, Hui-Ming.(2019).Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties.Small,16.

Cai, Zhengyang,et al."Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties".Small 16(2019).