题名 | Porous GaN Submicron Rods for Gas Sensor with High Sensitivity and Excellent Stability at High Temperature |
作者 | |
通讯作者 | Wang, Fei |
发表日期 | 2019-09-11
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DOI | |
发表期刊 | |
ISSN | 1944-8244
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EISSN | 1944-8252
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卷号 | 11期号:36页码:33124-33131 |
摘要 | Highly porous GaN submicron rods have been synthesized successfully by a facile hydrothermal method and heat treatment under controlled atmosphere. The morphology and size of the hydrothermal products are tailorable by adjusting the concentration of precursor solutions. Upon calcination in air, the nanorod-assembled GaOOH submicron rods are converted into bundlelike Ga2O3 and into porous GaN submicron rods under an ammonia flow. Gas-sensing characterization demonstrates that the sensors based on porous GaN exhibit high sensitivity and fast response to ethanol vapor, as well as excellent stability and reliability at high temperature. The highly porous GaN submicron rods with a large specific surface area, small grain size, and high length-to-diameter ratio show better response to ethanol. A possible sensing enhancement mechanism is also proposed. This study provides a promising route for the novel synthesis of GaN submicron rods for high-performance gas sensors. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 第一
; 通讯
|
资助项目 | Guangdong Special Support Program[2015TQ01X555]
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WOS研究方向 | Science & Technology - Other Topics
; Materials Science
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WOS类目 | Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
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WOS记录号 | WOS:000486360500056
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出版者 | |
EI入藏号 | 20194107509353
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EI主题词 | Ammonia
; Chemical sensors
; Ethanol
; Gas detectors
; III-V semiconductors
; Morphology
; Nanorods
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EI分类号 | Nanotechnology:761
; Chemistry:801
; Organic Compounds:804.1
; Inorganic Compounds:804.2
; Accidents and Accident Prevention:914.1
; Solid State Physics:933
; Materials Science:951
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:35
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/42212 |
专题 | 工学院_深港微电子学院 |
作者单位 | 1.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol, GaN Device Engn Technol Res Ctr Guangdong, Shenzhen 518055, Peoples R China |
第一作者单位 | 深港微电子学院 |
通讯作者单位 | 深港微电子学院; 南方科技大学 |
第一作者的第一单位 | 深港微电子学院 |
推荐引用方式 GB/T 7714 |
Zhang, Mingxiang,Zhao, Changhui,Gong, Huimin,et al. Porous GaN Submicron Rods for Gas Sensor with High Sensitivity and Excellent Stability at High Temperature[J]. ACS Applied Materials & Interfaces,2019,11(36):33124-33131.
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APA |
Zhang, Mingxiang,Zhao, Changhui,Gong, Huimin,Niu, Gaoqiang,&Wang, Fei.(2019).Porous GaN Submicron Rods for Gas Sensor with High Sensitivity and Excellent Stability at High Temperature.ACS Applied Materials & Interfaces,11(36),33124-33131.
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MLA |
Zhang, Mingxiang,et al."Porous GaN Submicron Rods for Gas Sensor with High Sensitivity and Excellent Stability at High Temperature".ACS Applied Materials & Interfaces 11.36(2019):33124-33131.
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Zhang-2019-Porous Ga(9291KB) | -- | -- | 限制开放 | -- |
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