题名 | High-fidelity and clean nanotransfer lithography using structure-embedded and electrostatic-adhesive carriers |
作者 | |
通讯作者 | Li, Wen-Di |
发表日期 | 2023-01-09
|
DOI | |
发表期刊 | |
ISSN | 2055-7434
|
EISSN | 2055-7434
|
卷号 | 9期号:1 |
摘要 | Metallic nanostructures are becoming increasingly important for both fundamental research and practical devices. Many emerging applications employing metallic nanostructures often involve unconventional substrates that are flexible or nonplanar, making direct lithographic fabrication very difficult. An alternative approach is to transfer prefabricated structures from a conventional substrate; however, it is still challenging to maintain high fidelity and a high yield in the transfer process. In this paper, we propose a high-fidelity, clean nanotransfer lithography method that addresses the above challenges by employing a polyvinyl acetate (PVA) film as the transferring carrier and promoting electrostatic adhesion through triboelectric charging. The PVA film embeds the transferred metallic nanostructures and maintains their spacing with a remarkably low variation of < 1%. When separating the PVA film from the donor substrate, electrostatic charges are generated due to triboelectric charging and facilitate adhesion to the receiver substrate, resulting in a high large-area transfer yield of up to 99.93%. We successfully transferred the metallic structures of a variety of materials (Au, Cu, Pd, etc.) with different geometries with a < 50-nm spacing, high aspect ratio (> 2), and complex 3D structures. Moreover, the thin and flexible carrier film enables transfer on highly curved surfaces, such as a single-mode optical fiber with a curvature radius of 62.5 mu m. With this strategy, we demonstrate the transfer of metallic nanostructures for a compact spectrometer with Cu nanogratings transferred on a convex lens and for surface-enhanced Raman spectroscopy (SERS) characterization on graphene with reliable responsiveness. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 其他
|
资助项目 | Research Grants Council of the Hong Kong Special Administrative Region["17207419","17209320","C7018-20G","AoE/P-701/20"]
; University of Hong Kong["202011159235","202010160046"]
; Shenzhen Government[K20799112]
|
WOS研究方向 | Science & Technology - Other Topics
; Instruments & Instrumentation
|
WOS类目 | Nanoscience & Nanotechnology
; Instruments & Instrumentation
|
WOS记录号 | WOS:000911747100001
|
出版者 | |
EI入藏号 | 20230413423892
|
EI主题词 | Adhesion
; Adhesives
; Aspect ratio
; Electrostatics
; Optical fiber fabrication
; Optical fibers
; Raman spectroscopy
; Spectrometers
|
EI分类号 | Electricity: Basic Concepts and Phenomena:701.1
; Fiber Optics:741.1.2
; Optical Devices and Systems:741.3
; Materials Science:951
|
Scopus记录号 | 2-s2.0-85146542834
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:7
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/425305 |
专题 | 工学院_深港微电子学院 工学院_材料科学与工程系 |
作者单位 | 1.Univ Hong Kong, Dept Mech Engn, Hong Kong, Peoples R China 2.Southern Univ Sci & Technol, Sch Microelect, Shenzhen, Peoples R China 3.Sun Yat Sen Univ, Sch Biomed Engn, Guangzhou, Peoples R China 4.Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen, Peoples R China 5.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen, Peoples R China |
第一作者单位 | 深港微电子学院 |
推荐引用方式 GB/T 7714 |
Gan, Zhuofei,Cai, Jingxuan,Sun, Zhao,et al. High-fidelity and clean nanotransfer lithography using structure-embedded and electrostatic-adhesive carriers[J]. Microsystems & Nanoengineering,2023,9(1).
|
APA |
Gan, Zhuofei.,Cai, Jingxuan.,Sun, Zhao.,Chen, Liyang.,Sun, Chuying.,...&Li, Wen-Di.(2023).High-fidelity and clean nanotransfer lithography using structure-embedded and electrostatic-adhesive carriers.Microsystems & Nanoengineering,9(1).
|
MLA |
Gan, Zhuofei,et al."High-fidelity and clean nanotransfer lithography using structure-embedded and electrostatic-adhesive carriers".Microsystems & Nanoengineering 9.1(2023).
|
条目包含的文件 | 条目无相关文件。 |
|
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论