中文版 | English
题名

High-fidelity and clean nanotransfer lithography using structure-embedded and electrostatic-adhesive carriers

作者
通讯作者Li, Wen-Di
发表日期
2023-01-09
DOI
发表期刊
ISSN
2055-7434
EISSN
2055-7434
卷号9期号:1
摘要
Metallic nanostructures are becoming increasingly important for both fundamental research and practical devices. Many emerging applications employing metallic nanostructures often involve unconventional substrates that are flexible or nonplanar, making direct lithographic fabrication very difficult. An alternative approach is to transfer prefabricated structures from a conventional substrate; however, it is still challenging to maintain high fidelity and a high yield in the transfer process. In this paper, we propose a high-fidelity, clean nanotransfer lithography method that addresses the above challenges by employing a polyvinyl acetate (PVA) film as the transferring carrier and promoting electrostatic adhesion through triboelectric charging. The PVA film embeds the transferred metallic nanostructures and maintains their spacing with a remarkably low variation of < 1%. When separating the PVA film from the donor substrate, electrostatic charges are generated due to triboelectric charging and facilitate adhesion to the receiver substrate, resulting in a high large-area transfer yield of up to 99.93%. We successfully transferred the metallic structures of a variety of materials (Au, Cu, Pd, etc.) with different geometries with a < 50-nm spacing, high aspect ratio (> 2), and complex 3D structures. Moreover, the thin and flexible carrier film enables transfer on highly curved surfaces, such as a single-mode optical fiber with a curvature radius of 62.5 mu m. With this strategy, we demonstrate the transfer of metallic nanostructures for a compact spectrometer with Cu nanogratings transferred on a convex lens and for surface-enhanced Raman spectroscopy (SERS) characterization on graphene with reliable responsiveness.
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
其他
资助项目
Research Grants Council of the Hong Kong Special Administrative Region["17207419","17209320","C7018-20G","AoE/P-701/20"] ; University of Hong Kong["202011159235","202010160046"] ; Shenzhen Government[K20799112]
WOS研究方向
Science & Technology - Other Topics ; Instruments & Instrumentation
WOS类目
Nanoscience & Nanotechnology ; Instruments & Instrumentation
WOS记录号
WOS:000911747100001
出版者
EI入藏号
20230413423892
EI主题词
Adhesion ; Adhesives ; Aspect ratio ; Electrostatics ; Optical fiber fabrication ; Optical fibers ; Raman spectroscopy ; Spectrometers
EI分类号
Electricity: Basic Concepts and Phenomena:701.1 ; Fiber Optics:741.1.2 ; Optical Devices and Systems:741.3 ; Materials Science:951
Scopus记录号
2-s2.0-85146542834
来源库
Web of Science
引用统计
被引频次[WOS]:7
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/425305
专题工学院_深港微电子学院
工学院_材料科学与工程系
作者单位
1.Univ Hong Kong, Dept Mech Engn, Hong Kong, Peoples R China
2.Southern Univ Sci & Technol, Sch Microelect, Shenzhen, Peoples R China
3.Sun Yat Sen Univ, Sch Biomed Engn, Guangzhou, Peoples R China
4.Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen, Peoples R China
5.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen, Peoples R China
第一作者单位深港微电子学院
推荐引用方式
GB/T 7714
Gan, Zhuofei,Cai, Jingxuan,Sun, Zhao,et al. High-fidelity and clean nanotransfer lithography using structure-embedded and electrostatic-adhesive carriers[J]. Microsystems & Nanoengineering,2023,9(1).
APA
Gan, Zhuofei.,Cai, Jingxuan.,Sun, Zhao.,Chen, Liyang.,Sun, Chuying.,...&Li, Wen-Di.(2023).High-fidelity and clean nanotransfer lithography using structure-embedded and electrostatic-adhesive carriers.Microsystems & Nanoengineering,9(1).
MLA
Gan, Zhuofei,et al."High-fidelity and clean nanotransfer lithography using structure-embedded and electrostatic-adhesive carriers".Microsystems & Nanoengineering 9.1(2023).
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