南方科技大学知识苑(SUSTech KC): Does interfacial exciton quenching exist in high-performance quantum dot light-emitting diodes?

题名	Does interfacial exciton quenching exist in high-performance quantum dot light-emitting diodes?
作者	Qu, Xiangwei 1,2,3; Liu, Wenbo1,2,3 ; Li, Depeng1,2,3 ; Ma, Jingrui1,2,3 ; Gu, Mi 1,2,3 ; Jia, Siqi 1,2,3; Xiang, Guohong 1,2,3; Sun, Xiao Wei1,2,3
通讯作者	Sun, Xiao Wei
发表日期	2023
DOI	10.1039/d2nr07119c
发表期刊	Nanoscale 影响因子和分区
ISSN	2040-3364
EISSN	2040-3372
卷号	15 期号:7页码:3430-3437
摘要	In quantum dot light-emitting diodes (QLEDs), even seemingly with interfacial exciton quenching between quantum dots (QDs) and the electron transport layer (ETL) limiting the device efficiency, the internal quantum efficiency of such QLEDs approaches 100%. Therefore, it is a puzzle that QLEDs exhibit high performance although they suffer from interfacial exciton quenching. In this work, we solve this puzzle by identifying the cause of the interfacial exciton quenching. By analyzing the optical characteristics of pristine and encapsulated QD-ETL films, the interfacial exciton quenching in the pristine QD-ETL film is attributed to O-2-induced charge transfer. We further investigate the charge transfer mechanism and its effect on the performance of QLEDs. Finally, we show the photodegradation of the pristine QD-ETL film under UV irradiation. Our work bridges interfacial exciton quenching and high performance in hybrid QLEDs and highlights the significance of encapsulation in QLEDs.
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	第一 ; 通讯
资助项目	National Key Research and Development Program of China["2021YFB3602703","2022YFB3606504","2022YFB3602903"] ; Key-Area Research and Development Program of Guangdong Province["2019B010925001","2019B010924001"] ; Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting[2017KSYS007] ; Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting[ZDSYS201707281632549]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000920735600001
出版者	ROYAL SOC CHEMISTRY
EI入藏号	20230613551144
EI主题词	Charge transfer ; Electron transport properties ; Excitons ; Irradiation ; Nanocrystals ; Organic light emitting diodes (OLED) ; Quantum chemistry ; Quantum efficiency ; Quenching
EI分类号	Heat Treatment Processes:537.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Quantum Theory; Quantum Mechanics:931.4 ; Crystalline Solids:933.1
来源库	Web of Science
引用统计	被引频次[WOS]：6
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/430727
专题	工学院_电子与电气工程系
作者单位	1.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol, Guangdong Univ Key Lab Adv Quantum Dot Displays &, Minist Educ, Key Lab Energy Convers & Storage Technol,Guangdong, Shenzhen 518055, Peoples R China 3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
第一作者单位	南方科技大学; 电子与电气工程系
通讯作者单位	南方科技大学; 电子与电气工程系
第一作者的第一单位	南方科技大学
推荐引用方式 GB/T 7714	Qu, Xiangwei,Liu, Wenbo,Li, Depeng,et al. Does interfacial exciton quenching exist in high-performance quantum dot light-emitting diodes?[J]. Nanoscale,2023,15(7):3430-3437.
APA	Qu, Xiangwei.,Liu, Wenbo.,Li, Depeng.,Ma, Jingrui.,Gu, Mi.,...&Sun, Xiao Wei.(2023).Does interfacial exciton quenching exist in high-performance quantum dot light-emitting diodes?.Nanoscale,15(7),3430-3437.
MLA	Qu, Xiangwei,et al."Does interfacial exciton quenching exist in high-performance quantum dot light-emitting diodes?".Nanoscale 15.7(2023):3430-3437.