题名 | Epitaxial Synthesis of Monolayer PtSe2 Single Crystal on MoSe2 with Strong Interlayer Coupling |
作者 | |
通讯作者 | Lin,Junhao |
发表日期 | 2019-10-22
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DOI | |
发表期刊 | |
ISSN | 1936-0851
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EISSN | 1936-086X
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卷号 | 13期号:10页码:10929-10938 |
摘要 | PtSe, a layered two-dimensional transition-metal dichalcogenide (TMD), has drawn intensive attention owing to its layer-dependent band structure, high air stability, and spin-layer locking effect which can be used in various applications for next-generation optoelectronic and electronic devices or catalysis applications. However, synthesis of PtSe is highly challenging due to the low chemical reactivity of Pt sources. Here, we report the chemical vapor deposition of monolayer PtSe single crystals on MoSe. The periodic Moiré patterns from the vertically stacked heterostructure (PtSe/MoSe) are clearly identified via annular dark-field scanning transmission electron microscopy. First-principles calculations show a type II band alignment and reveal interface states originating from the strong-weak interlayer coupling (SWIC) between PtSe and MoSe monolayers, which is supported by the electrostatic force microscopy imaging. Ultrafast hole transfer between PtSe and MoSe monolayers is observed in the PtSe/MoSe heterostructure, matching well with the theoretical results. Our study will shed light on the synthesis of Pt-based TMD heterostructures and boost the realization of SWIC-based optoelectronic devices. |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
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重要成果 | NI期刊
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学校署名 | 通讯
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资助项目 | Science, Technology, and Innovation Commission of Shenzhen Municipality[ZDSYS20170303165926217]
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WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
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WOS类目 | Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
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WOS记录号 | WOS:000492801600008
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出版者 | |
EI入藏号 | 20194207559233
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EI主题词 | Calculations
; Chemical vapor deposition
; Chromium compounds
; Electric force microscopy
; Electrostatic force
; High resolution transmission electron microscopy
; Interface states
; Locks (fasteners)
; Monolayers
; Optoelectronic devices
; Platinum compounds
; Scanning electron microscopy
; Single crystals
; Transition metals
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EI分类号 | Metallurgy and Metallography:531
; Electricity: Basic Concepts and Phenomena:701.1
; Optical Devices and Systems:741.3
; Imaging Techniques:746
; Chemical Reactions:802.2
; Mathematics:921
; Classical Physics; Quantum Theory; Relativity:931
; High Energy Physics; Nuclear Physics; Plasma Physics:932
; Crystalline Solids:933.1
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Scopus记录号 | 2-s2.0-85073455548
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来源库 | Scopus
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引用统计 |
被引频次[WOS]:76
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/43826 |
专题 | 理学院_物理系 |
作者单位 | 1.School of Materials Science and EngineeringNanyang Technological University,Singapore,639798,Singapore 2.Department of PhysicsCentre for the Physics of MaterialsMcGill University,Montreal,H3A 2T8,Canada 3.Department of PhysicsBeijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano DevicesRenmin University of China,Beijing,100872,China 4.International Center for Quantum MaterialsSchool of PhysicsPeking University,Beijing,100871,China 5.Collaborative Innovation Center of Quantum Matter,Beijing,100871,China 6.Department of PhysicsSouthern University of Science and Technology,Shenzhen,518055,China 7.CAS Key Laboratory of Standardization and Measurement for NanotechnologyCAS Center for Excellence in NanoscienceNational Center for Nanoscience and Technology,Beijing,100190,China 8.Centre for Disruptive Photonic TechnologiesSchool of Physical and Mathematical SciencesNanyang Technological University,Singapore,637371,Singapore 9.National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba,305-8565,Japan 10.CNRS International NTU THALES Research AlliancesUMI 3288Research Techno Plaza,Singapore,50 Nanyang Drive, Border X Block, Level 6,637553,Singapore |
通讯作者单位 | 物理系 |
推荐引用方式 GB/T 7714 |
Zhou,Jiadong,Kong,Xianghua,Sekhar,M. Chandra,et al. Epitaxial Synthesis of Monolayer PtSe2 Single Crystal on MoSe2 with Strong Interlayer Coupling[J]. ACS Nano,2019,13(10):10929-10938.
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APA |
Zhou,Jiadong.,Kong,Xianghua.,Sekhar,M. Chandra.,Lin,Junhao.,Le Goualher,Frederic.,...&Liu,Zheng.(2019).Epitaxial Synthesis of Monolayer PtSe2 Single Crystal on MoSe2 with Strong Interlayer Coupling.ACS Nano,13(10),10929-10938.
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MLA |
Zhou,Jiadong,et al."Epitaxial Synthesis of Monolayer PtSe2 Single Crystal on MoSe2 with Strong Interlayer Coupling".ACS Nano 13.10(2019):10929-10938.
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Zhou-2019-Epitaxial (8894KB) | -- | -- | 限制开放 | -- |
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