Enhancing the Efficiency and Stability of NiOx-Based Silicon Photoanode via Interfacial Engineering

Ying，Zhiqin1,3; Yang，Xi4; Tong，Rui1; Zhu，Qing1; Chen，Tian3; He，Zhubing3; Pan，Hui1,2

2019-09-23

10.1021/acsaem.9b01384

ACS Applied Energy Materials   影响因子和分区

25740962

2574-0962

The photoelectrochemical performance of Si photoanode with a metal-insulator-semiconductor (MIS) structure is limited by weak Schottky barrier and poor charge transfer. In this work, a MIS structure, n-Si|dispersed NiSi/NiO patches|Au nanoparticles, is designed for efficient water oxidization with high stability. The photoanode exhibits a high activity with a low onset potential of ∼0.88 V and a high photocurrent density of ∼34 mA/cm at 1.23 V versus reversible hydrogen electrode (RHE), and retains excellent stability in 1.0 M NaOH for ∼10 h. We find that the improved photovoltage is contributed by the strengthened pinch-off effect of inhomogeneous Schottky barriers induced by the synergistic effect of decreased Schottky barrier height difference and increased depletion width in n-Si. We show that the enhanced photocurrent attributes to the reduced hole transport resistance by introducing high-conductive NiSi and Au-NP bridge layers. Our findings demonstrate a promising strategy for the development of highly efficient and stable Si-based photoelectrodes for water oxidization.

Au nanoparticles NiOx photoelectrochemical water-splitting pinch-off effect silicon photoanode

EI ; SCI

英语

通讯

Universidade de Macau[] ; National Natural Science Foundation of China[61775091] ; School for Advanced Research[FDCT-110/2014/SB] ; Science and Technology Development Fund[] ; [JCYJ20180504165851864] ; National Natural Science Foundation of China[] ; Shenzhen Key Laboratory of Neuropsychiatric Modulation[ZDSYS201602261933302]

Chemistry ; Energy & Fuels ; Materials Science

Chemistry, Physical ; Energy & Fuels ; Materials Science, Multidisciplinary

WOS:000487770000086

American Chemical Society

20193907479434

Charge transfer ; Electrochemistry ; Gold nanoparticles ; Metal insulator boundaries ; MIS devices ; Nanoparticles ; Schottky barrier diodes ; Silicon compounds ; Sodium hydroxide

Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Electrochemistry:801.4.1 ; Chemical Reactions:802.2 ; Solid State Physics:933

2-s2.0-85072645358

Scopus

1.Joint Key Laboratory of the Ministry of EducationInstitute of Applied Physics and Materials EngineeringUniversity of Macau,999078,Macao
2.Department of Physics and ChemistryFaculty of Science and TechnologyUniversity of Macau,999078,Macao
3.Department of Materials Science and EngineeringShenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG)Southern University of Science and Technology,Shenzhen, Guangdong,No. 1088, Xueyuan Road,518055,China
4.Ningbo Institute of Material Technology and EngineeringChinese Academy of Sciences,Ningbo, Zhejiang,315201,China

Ying，Zhiqin,Yang，Xi,Tong，Rui,et al. Enhancing the Efficiency and Stability of NiOx-Based Silicon Photoanode via Interfacial Engineering[J]. ACS Applied Energy Materials,2019,2(9):6883-6890.

Ying，Zhiqin.,Yang，Xi.,Tong，Rui.,Zhu，Qing.,Chen，Tian.,...&Pan，Hui.(2019).Enhancing the Efficiency and Stability of NiOx-Based Silicon Photoanode via Interfacial Engineering.ACS Applied Energy Materials,2(9),6883-6890.

Ying，Zhiqin,et al."Enhancing the Efficiency and Stability of NiOx-Based Silicon Photoanode via Interfacial Engineering".ACS Applied Energy Materials 2.9(2019):6883-6890.