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题名

Effect of Lateral Size and Surface Passivation on the Near-Band-Edge Excitonic Emission from Quasi-Two-Dimensional CdSe Nanoplatelets

作者
通讯作者Chen,Rui
发表日期
2019
DOI
发表期刊
ISSN
1944-8244
EISSN
1944-8252
卷号11期号:44页码:41821-41827
摘要
As a new type of quasi-two-dimensional nanomaterial, CdSe nanoplatelets (NPLs) possess excellent properties such as narrow emission peak, large absorption cross section, and a low threshold of amplified spontaneous emission. However, the origin of emission especially at low temperatures has not been studied clearly up till now. Here, we study the temperature-dependent photoluminescence of CdSe NPLs which show two emission peaks at low temperatures. It is interesting to note that the intensity of the low-energy peak shows a correlation with laser irradiation time. Moreover, the low-temperature PL spectra of four CdSe NPLs with different lateral sizes demonstrate the relationship of low-energy peaks with the surface. It has been confirmed that CdSe NPLs with larger surface areas to volume ratio have stronger low-energy emissions, which is ascribed to the surface-state-related emission. Finally, surface passivation of CdSe NPLs attenuates the intensity of the low-energy peak, which further verifies our model. Our results demonstrate the critical significance of surface in CdSe NPLs for their optical properties, which is crucial for the application of optoelectronic devices.
关键词
相关链接[Scopus记录]
收录类别
SCI ; EI
语种
英语
学校署名
第一 ; 通讯
资助项目
Shenzhen Science and Technology Innovation Commission[KQJSCX20170726145748464] ; Shenzhen Science and Technology Innovation Commission[JCYJ20180305180553701] ; Shenzhen Science and Technology Innovation Commission[KQTD2015071710313656]
WOS研究方向
Science & Technology - Other Topics ; Materials Science
WOS类目
Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:000495769900089
出版者
EI入藏号
20194507616282
EI主题词
II-VI semiconductors ; Nanostructured materials ; Optical properties ; Optoelectronic devices ; Passivation ; Selenium compounds ; Surface states ; Temperature
EI分类号
Protection Methods:539.2.1 ; Thermodynamics:641.1 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Nanotechnology:761 ; Classical Physics; Quantum Theory; Relativity:931 ; High Energy Physics; Nuclear Physics; Plasma Physics:932
Scopus记录号
2-s2.0-85074286170
来源库
Scopus
引用统计
被引频次[WOS]:24
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/44009
专题工学院_电子与电气工程系
作者单位
1.Department of Electrical and Electronic EngineeringSouthern University of Science and Technology,Shenzhen, Guangdong,518055,China
2.Harbin Institute of Technology,Harbin,150001,China
第一作者单位电子与电气工程系
通讯作者单位电子与电气工程系
第一作者的第一单位电子与电气工程系
推荐引用方式
GB/T 7714
Yu,Jiahao,Zhang,Chaojian,Pang,Guotao,et al. Effect of Lateral Size and Surface Passivation on the Near-Band-Edge Excitonic Emission from Quasi-Two-Dimensional CdSe Nanoplatelets[J]. ACS Applied Materials & Interfaces,2019,11(44):41821-41827.
APA
Yu,Jiahao,Zhang,Chaojian,Pang,Guotao,Sun,Xiao Wei,&Chen,Rui.(2019).Effect of Lateral Size and Surface Passivation on the Near-Band-Edge Excitonic Emission from Quasi-Two-Dimensional CdSe Nanoplatelets.ACS Applied Materials & Interfaces,11(44),41821-41827.
MLA
Yu,Jiahao,et al."Effect of Lateral Size and Surface Passivation on the Near-Band-Edge Excitonic Emission from Quasi-Two-Dimensional CdSe Nanoplatelets".ACS Applied Materials & Interfaces 11.44(2019):41821-41827.
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