题名 | Effect of Lateral Size and Surface Passivation on the Near-Band-Edge Excitonic Emission from Quasi-Two-Dimensional CdSe Nanoplatelets |
作者 | |
通讯作者 | Chen,Rui |
发表日期 | 2019
|
DOI | |
发表期刊 | |
ISSN | 1944-8244
|
EISSN | 1944-8252
|
卷号 | 11期号:44页码:41821-41827 |
摘要 | As a new type of quasi-two-dimensional nanomaterial, CdSe nanoplatelets (NPLs) possess excellent properties such as narrow emission peak, large absorption cross section, and a low threshold of amplified spontaneous emission. However, the origin of emission especially at low temperatures has not been studied clearly up till now. Here, we study the temperature-dependent photoluminescence of CdSe NPLs which show two emission peaks at low temperatures. It is interesting to note that the intensity of the low-energy peak shows a correlation with laser irradiation time. Moreover, the low-temperature PL spectra of four CdSe NPLs with different lateral sizes demonstrate the relationship of low-energy peaks with the surface. It has been confirmed that CdSe NPLs with larger surface areas to volume ratio have stronger low-energy emissions, which is ascribed to the surface-state-related emission. Finally, surface passivation of CdSe NPLs attenuates the intensity of the low-energy peak, which further verifies our model. Our results demonstrate the critical significance of surface in CdSe NPLs for their optical properties, which is crucial for the application of optoelectronic devices. |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | Shenzhen Science and Technology Innovation Commission[KQJSCX20170726145748464]
; Shenzhen Science and Technology Innovation Commission[JCYJ20180305180553701]
; Shenzhen Science and Technology Innovation Commission[KQTD2015071710313656]
|
WOS研究方向 | Science & Technology - Other Topics
; Materials Science
|
WOS类目 | Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
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WOS记录号 | WOS:000495769900089
|
出版者 | |
EI入藏号 | 20194507616282
|
EI主题词 | II-VI semiconductors
; Nanostructured materials
; Optical properties
; Optoelectronic devices
; Passivation
; Selenium compounds
; Surface states
; Temperature
|
EI分类号 | Protection Methods:539.2.1
; Thermodynamics:641.1
; Light/Optics:741.1
; Optical Devices and Systems:741.3
; Nanotechnology:761
; Classical Physics; Quantum Theory; Relativity:931
; High Energy Physics; Nuclear Physics; Plasma Physics:932
|
Scopus记录号 | 2-s2.0-85074286170
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:24
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/44009 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Department of Electrical and Electronic EngineeringSouthern University of Science and Technology,Shenzhen, Guangdong,518055,China 2.Harbin Institute of Technology,Harbin,150001,China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Yu,Jiahao,Zhang,Chaojian,Pang,Guotao,et al. Effect of Lateral Size and Surface Passivation on the Near-Band-Edge Excitonic Emission from Quasi-Two-Dimensional CdSe Nanoplatelets[J]. ACS Applied Materials & Interfaces,2019,11(44):41821-41827.
|
APA |
Yu,Jiahao,Zhang,Chaojian,Pang,Guotao,Sun,Xiao Wei,&Chen,Rui.(2019).Effect of Lateral Size and Surface Passivation on the Near-Band-Edge Excitonic Emission from Quasi-Two-Dimensional CdSe Nanoplatelets.ACS Applied Materials & Interfaces,11(44),41821-41827.
|
MLA |
Yu,Jiahao,et al."Effect of Lateral Size and Surface Passivation on the Near-Band-Edge Excitonic Emission from Quasi-Two-Dimensional CdSe Nanoplatelets".ACS Applied Materials & Interfaces 11.44(2019):41821-41827.
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Yu-2019-Effect of La(2261KB) | -- | -- | 限制开放 | -- |
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