Planar Direction-Dependent Interfacial Properties in Monolayer In2Se3–Metal Contacts

Yang，Chen1,2; Zhang，Xiuying1; Sun，Xiaotian3; Zhang，Han1; Tang，Hao1; Shi，Bowen1; Pang，Hua1; Xu，Linqiang1; Liu，Shiqi1; Yang，Jie1; Yan，Jiahuan1; Xu，Lin4; Zhang，Zhiyong4; Yang，Jinbo1,5,6; Yu，Dapeng1,2,5,7; Lu，Jing1,2,5,6

2019

10.1002/pssb.201900198

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   影响因子和分区

0370-1972

1521-3951

2D semiconductor materials are promising channel materials in the next generation of field-effect transistors (FETs). Recently, 2D InSe has been fabricated and predicted to present planar direction-dependent electrical properties. Herein, ab initio quantum transport simulations are used to explore the interfacial properties between monolayer (ML) InSe and a series of common metal electrodes in a FET. By reversing the planar direction of ML InSe, different lateral interfacial properties are obtained: A highly desirable n-type ohmic contact is shaped between Au and up-directed ML InSe; however, a p-type Schottky contact appears when the direction is switched. In addition, Ag can generate desirable lateral n-type ohmic contact with both the directions of ML InSe. A reversion from n- to p-type lateral Schottky contact occurs in both In and Sc when the direction switches from up to down. Down-directed ML InSe is dynamically unstable with the Pt and transforms into up-direction to form a p-type ohmic contact. The average pinning factor is 0.12 and 0.09 for up-and down-directed ML InSe, respectively, implying a strong Fermi-level pinning. Therefore, the planar direction-dependent interfacial properties of ML InSe–metal contacts are understood deeply, which can be exploited for the ML InSe FET devices.

field-effect transistors interfacial properties monolayer In2Se3 quantum transport simulations

SCI ; EI

英语

其他

Ministry of Science and Technology of the People's Republic of China[2016YFB0700600] ; National Materials Genome Project[2016YFA0301300] ; National Natural Science Foundation of China[11674005/11664026/11704406/11804140]

Physics

Physics, Condensed Matter

WOS:000506381800015

Wiley-VCH Verlag

20194507622432

Electric contactors ; Field effect transistors ; Monolayers ; Ohmic contacts ; Quantum chemistry ; Selenium compounds ; Semiconductor materials

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Physical Chemistry:801.4

PHYSICS

2-s2.0-85074248458

Scopus

1.State Key Laboratory of Mesoscopic Physics and Department of PhysicsPeking University,Beijing,100871,China
2.Academy for Advanced Interdisciplinary StudiesPeking University,Beijing,100871,China
3.College of Chemistry and Chemical Engineering and Henan Key Laboratory of Function- Oriented Porous MaterialsLuoyang Normal University,Luoyang,471934,China
4.Key Laboratory for the Physics and Chemistry of Nanodevices and Department of ElectronicsPeking University,Beijing,100871,China
5.State Key Laboratory of Mesoscopic Physics and Department of PhysicsCollaborative Innovation Center of Quantum MatterPeking University,Beijing,100871,China
6.Beijing Key Laboratory for Magnetoelectric Materials and Devices,Beijing,100871,China
7.Department of PhysicsSouth University of Science and Technology of China,Shenzhen,518055,China

Yang，Chen,Zhang，Xiuying,Sun，Xiaotian,等. Planar Direction-Dependent Interfacial Properties in Monolayer In2Se3–Metal Contacts[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2019,257(1).

Yang，Chen.,Zhang，Xiuying.,Sun，Xiaotian.,Zhang，Han.,Tang，Hao.,...&Lu，Jing.(2019).Planar Direction-Dependent Interfacial Properties in Monolayer In2Se3–Metal Contacts.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,257(1).

Yang，Chen,et al."Planar Direction-Dependent Interfacial Properties in Monolayer In2Se3–Metal Contacts".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 257.1(2019).