Reaction and Energy Levels at Oxide–Oxide Heterojunction Interfaces

Kung，Hao Ting1; Li，Peicheng1; Lee，Jae Jin1; Zhao，Yongbiao2; Dumont，Antoine1; Lu，Zheng Hong1,2,3

2019

10.1002/admi.201901456

Advanced Materials Interfaces   影响因子和分区

2196-7350

2196-7350

Oxide–oxide heterojunction interfaces (OHIs) are foundations for many applications such as transistors, optoelectronic devices, and chemical catalysis. The formation of OHIs involves complex events such as charge transfer, interfacial diffusion, and chemical reactions. These events collectively contribute to an OHI's energy structure and to its ability to perform an intended application. Here, multiple MoO/oxide interfaces are studied at which changes in multiple oxidation states Mo can be easily tracked. For the formation of reactive interfaces, it is found that the primary driving force behind the reduction of MoO is redox reactions at the interfaces. For the nonreactive interface, the reduction of MoO occurs as a result of various factors such as oxygen deficiency. At these OHIs, band bending and formation of interface dipole are observed. It is discovered that the degrees of interface dipole and work function at the OHIs scale linearly as a function of the contacting oxide's work function. These findings provide the guide in designing OHIs for a specific application.

energy level alignment oxidation states oxide heterojunction interface photoelectron spectroscopy redox reaction

SCI ; EI

英语

其他

[950-220944] ; Natural Sciences and Engineering Research Council of Canada[216956-12] ; National Natural Science Foundation of China[11774304]

Chemistry ; Materials Science

Chemistry, Multidisciplinary ; Materials Science, Multidisciplinary

WOS:000501805700012

WILEY

20194407596585

Charge transfer ; Heterojunctions ; Molybdenum oxide ; Optoelectronic devices ; Photoelectron spectroscopy ; Redox reactions ; Reduction ; Work function

Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Classical Physics; Quantum Theory; Relativity:931 ; High Energy Physics; Nuclear Physics; Plasma Physics:932

2-s2.0-85073927800

Scopus

1.Department of Materials Science and EngineeringUniversity of Toronto,Toronto,M5G 3E4,Canada
2.Department of PhysicsCenter for Optoelectronics Engineering ResearchYunnan University,Kunming,650091,China
3.School of MicroelectronicsSouthern University of Science and Technology,Shenzhen,518055,China

Kung，Hao Ting,Li，Peicheng,Lee，Jae Jin,等. Reaction and Energy Levels at Oxide–Oxide Heterojunction Interfaces[J]. Advanced Materials Interfaces,2019,6(22).

Kung，Hao Ting,Li，Peicheng,Lee，Jae Jin,Zhao，Yongbiao,Dumont，Antoine,&Lu，Zheng Hong.(2019).Reaction and Energy Levels at Oxide–Oxide Heterojunction Interfaces.Advanced Materials Interfaces,6(22).

Kung，Hao Ting,et al."Reaction and Energy Levels at Oxide–Oxide Heterojunction Interfaces".Advanced Materials Interfaces 6.22(2019).