Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction

Tang，Hongyu1,2,3; Li，Yutao2; Sokolovskij，Robert1,4; Sacco，Leandro1; Zheng，Hongze4; Ye，Huaiyu4,5; Yu，Hongyu4; Fan，Xuejun6; Tian，He2; Ren，Tian Ling2; Zhang，Guoqi1

2019

10.1021/acsami.9b13773

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

1944-8252

In this work, a thin-film transistor gas sensor based on the p-N heterojunction is fabricated by stacking chemical vapor deposition-grown tungsten disulfide (WS) with a sputtered indium-gallium-zinc-oxide (IGZO) film. To the best of our knowledge, the present device has the best NO gas sensor response compared to all the gas sensors based on transition-metal dichalcogenide materials. The gas-sensing response is investigated under different NO concentrations, adopting heterojunction device mode and transistor mode. High sensing response is obtained of p-N diode in the range of 1-300 ppm with values of 230% for 5 ppm and 18 170% for 300 ppm. On the transistor mode, the gas-sensing response can be modulated by the gate bias, and the transistor shows an ultrahigh response after exposure to NO, with sensitivity values of 6820% for 5 ppm and 499 400% for 300 ppm. Interestingly, the transistor has a typical ambipolar behavior under dry air, while the transistor becomes p-type as the amount of NO increases. The assembly of these results demonstrates that the WS/IGZO device is a promising platform for the NO-gas detection, and its gas-modulated transistor properties show a potential application in tunable engineering for two-dimensional material heterojunction-based transistor device.

ambipolar gas sensing NO2 p-N heterojunction TFT WS2/IGZO

SCI ; EI

英语

通讯

National Key Research and Development Program of China[2018YFE0204600]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000493869700148

AMER CHEMICAL SOC

20194307583690

Chemical detection ; Chemical sensors ; Chemical vapor deposition ; Gallium compounds ; Gas detectors ; Gas sensing electrodes ; Heterojunctions ; II-VI semiconductors ; Nitrogen oxides ; Semiconducting indium compounds ; Sulfur compounds ; Thin film transistors ; Transition metals ; Tungsten compounds ; Zinc oxide

Metallurgy and Metallography:531 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemistry:801 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; Accidents and Accident Prevention:914.1

2-s2.0-85073812872

Scopus

1.Department of MicroelectronicsDelft University of Technology,Delft,2628 CD,Netherlands
2.Institute of MicroelectronicsBeijing National Research Center for Information Science and Technology (BNRist)Tsinghua University,Beijing,100084,China
3.Changzhou Institute of Technology Research for Solid State Lighting,Changzhou,213161,China
4.School of MicroelectronicsSouthern University of Science and Technology,Shenzhen,518055,China
5.Shenzhen Institute of Wide-bandgap Semiconductors,Shenzhen,518055,China
6.Department of Mechanical EngineeringLamar University,Beaumont,77710,United States

Tang，Hongyu,Li，Yutao,Sokolovskij，Robert,et al. Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction[J]. ACS Applied Materials & Interfaces,2019,11(43):40850-40859.

Tang，Hongyu.,Li，Yutao.,Sokolovskij，Robert.,Sacco，Leandro.,Zheng，Hongze.,...&Zhang，Guoqi.(2019).Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction.ACS Applied Materials & Interfaces,11(43),40850-40859.

Tang，Hongyu,et al."Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction".ACS Applied Materials & Interfaces 11.43(2019):40850-40859.