Bilayer tellurene-metal interfaces

Pang，Hua1; Yan，Jiahuan1; Yang，Jie1; Liu，Shiqi1; Pan，Yuanyuan1; Zhang，Xiuying1; Shi，Bowen1; Tang，Hao1; Yang，Jinbo1,2; Liu，Qihang3; Xu，Lianqiang4; Wang，Yangyang5; Lv，Jing1,2,6

2019

10.1088/1674-4926/40/6/062003

Journal of Semiconductors   影响因子和分区

1674-4926

Tellurene, an emerging two-dimensional chain-like semiconductor, stands out for its high switch ratio, carrier mobility and excellent stability in air. Directly contacting the 2D semiconductor materials with metal electrodes is a feasible doping means to inject carriers. However, Schottky barrier often arises at the metal-semiconductors interface, impeding the transport of carriers. Herein, we investigate the interfacial properties of BL tellurene by contacting with various metals including graphene by using ab initio calculations and quantum transport simulations. Vertical Schottky barriers take place in Ag, Al, Au and Cu electrodes according to the maintenance of the noncontact tellurene layer band structure. Besides, a p-Type vertical Schottky contact is formed due to the van der Waals interaction for graphene electrode. As for the lateral direction, p-Type Schottky contacts take shape for bulk metal electrodes (hole Schottky barrier heights (SBHs) ranging from 0.19 to 0.35 eV). Strong Fermi level pinning takes place with a pinning factor of 0.02. Notably, a desirable p-Type quasi-Ohmic contact is developed for graphene electrode with a hole SBH of 0.08 eV. Our work sheds light on the interfacial properties of BL tellurene based transistors and could guide the experimental selections on electrodes.

bilayer tellurene First-principles calculation Quantum transport simulation Schottky barrier

ESCI

英语

其他

National Natural Science Foundation of China[11674005][11664026,11704406] ; National Materials Genome Project of China[2016YFB0700600] ; Key Research and Development Program of Ningxia[2018BEE03023] ; Natural Science Foundation of Ningxia[2018AAC03236] ; Higher School Scientific Research Project of Ningxia Department of Education[NGY2018-130] ; Key Scientific Research Project of Ningxia Normal University[NXSFZDA1807]

Physics

Physics, Condensed Matter

WOS:000475376300009

IOP PUBLISHING LTD

2-s2.0-85069701722

Scopus

1.State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking University,Beijing,100871,China
2.Collaborative Innovation Center of Quantum Matter,Beijing,100871,China
3.Shenzhen Institute for Quantum Science and Technology and Department of PhysicsSouthern University of Science and Technology,Shenzhen,518055,China
4.School of Physics and Electronic Information EngineeringEngineering Research Center of Nanostructure and Functional MaterialsNingxia Normal University,Guyuan,756000,China
5.Nanophotonics and Optoelectronics Research CenterQian Xuesen Laboratory of Space TechnologyChina Academy of Space Technology,Beijing,100094,China
6.Beijing Key Laboratory for Magnetoeletric Materials and Devices (BKL-MEMD),Beijing,100871,China

Pang，Hua,Yan，Jiahuan,Yang，Jie,et al. Bilayer tellurene-metal interfaces[J]. Journal of Semiconductors,2019,40(6).

Pang，Hua.,Yan，Jiahuan.,Yang，Jie.,Liu，Shiqi.,Pan，Yuanyuan.,...&Lv，Jing.(2019).Bilayer tellurene-metal interfaces.Journal of Semiconductors,40(6).

Pang，Hua,et al."Bilayer tellurene-metal interfaces".Journal of Semiconductors 40.6(2019).