Controlled one step thinning and doping of two-dimensional transition metal dichalcogenides 一步法可控减薄和掺杂二维过渡金属硫族化合物

Ren，Jie1; Teng，Changjiu1; Cai，Zhengyang1; Pan，Haiyang2; Liu，Jiaman1; Zhao，Yue2; Liu，Bilu1

2019

10.1007/s40843-019-9461-8

Science China-Materials   影响因子和分区

2095-8226

2199-4501

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have drawn intensive attention due to their ultrathin feature with excellent electrostatic gating capability, and unique thickness-dependent electronic and optical properties. Controlling the thickness and doping of 2D TMDCs are crucial toward their future applications. Here, we report an effective HAuCl treatment method and achieve simultaneous thinning and doping of various TMDCs in one step. We find that the HAuCl treatment not only thins thick MoS flakes into few layers or even monolayers, but also simultaneously tunes MoS into p-type. The effects of various parameters in the process have been studied systematically, and an Au intercalation assisted thinning and doping mechanism is proposed. Importantly, this method also works for other typical TMDCs, including WS, MoSe and WSe, showing good universality. Electrical transport measurements of field-effect transistors (FETs) based on MoS flakes show a big increase of On/Off current ratios (from 10 to 10) after the HAuCl treatment. Meanwhile, the subthreshold voltages of the MoS FETs shift from −60 to +27 V after the HAuCl treatment, with a p-type doping behavior. This study provides an effective and simple method to control the thickness and doping properties of 2D TMDCs, paving a way for their applications in high performance electronics and optoelectronics.

2D materials doping field-effect transistor HAuCl4 MoS2 thinning transition metal dichalcogenides

SCI ; EI

中文

其他

Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Guangdong Innovative and Entrepreneurial Research Team Program[2016ZT06D348]

Materials Science

Materials Science, Multidisciplinary

WOS:000496593500008

SCIENCE PRESS

20192907190960

Chlorine compounds ; Doping (additives) ; Electric field effects ; Field effect transistors ; Gold compounds ; Layered semiconductors ; Molybdenum compounds ; Monolayers ; Optical properties ; Selenium compounds ; Transition metals

Metallurgy and Metallography:531 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1

2-s2.0-85068857827

Scopus

1.Shenzhen Geim Graphene Center (SGC)Tsinghua-Berkeley Shenzhen InstituteTsinghua University,Shenzhen,518055,China
2.Shenzhen Institute for Quantum Science and Engineering and Department of PhysicsSouth University of Science and Technology of China,Shenzhen,518055,China

Ren，Jie,Teng，Changjiu,Cai，Zhengyang,等. Controlled one step thinning and doping of two-dimensional transition metal dichalcogenides 一步法可控减薄和掺杂二维过渡金属硫族化合物[J]. Science China-Materials,2019,62(12):1837-1845.

Ren，Jie.,Teng，Changjiu.,Cai，Zhengyang.,Pan，Haiyang.,Liu，Jiaman.,...&Liu，Bilu.(2019).Controlled one step thinning and doping of two-dimensional transition metal dichalcogenides 一步法可控减薄和掺杂二维过渡金属硫族化合物.Science China-Materials,62(12),1837-1845.

Ren，Jie,et al."Controlled one step thinning and doping of two-dimensional transition metal dichalcogenides 一步法可控减薄和掺杂二维过渡金属硫族化合物".Science China-Materials 62.12(2019):1837-1845.