D-Band Surface-Wave Modulator and Signal Source with 40 dB Extinction Ratio and 3.7mW Output Power in 65 nm CMOS

Liang，Yuan1,2; Yu，Hao3; Boon，Chirn Chye1; Li，Chenyang1; Kissinger，Dietmar1,2; Wang，Yong2,4

10.1109/ESSCIRC.2018.8494264

2018-10-16

1930-8833

978-1-5386-5405-7

ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference

202-205

3-6 Sept. 2018

Dresden, Germany

Institute of Electrical and Electronics Engineers Inc.

High extinction ratio (ER) modulator and high output power source are demonstrated in 65 nm CMOS by generating the surface-wave at D-band. By introducing subwavelength periodic corrugation structure, surface plasmon polariton (SPP) is established to propagate TM-mode signal with strongly localized surface-wave, significantly reducing the radiation loss at sub-THz. A high-Q surface-wave resonator is formed by periodically drilling grooves onto split ring resonator (SRR) unit-cells with interleaving placement. Modulation is realized by tuning the inner ring of the stacked SRR. A four-ways power combined fundamental 80 GHz coupled-oscillator-network (CON) is realized by incorporating the surface-wave resonator unit-cell, which is frequency doubled to 160 GHz. Measured results show that modulator achieves the best isolation and ER under the smallest area, and the proposed CON achieves high power efficiency and power density.

CMOS oscillator coupled oscillator network metamaterial modulator resonator surface plasmon polariton

通讯

英语

EI

[1] ; [MOE RG86/16]

20184706119509

CMOS integrated circuits ; Electromagnetic wave polarization ; Light extinction ; Metamaterials ; Modulators ; Oscillators (mechanical) ; Phonons ; Photons ; Resonators ; Ring gages ; Surface plasmon resonance ; Surface plasmons ; Terahertz waves

Mechanical Devices:601.1 ; Electromagnetic Waves:711 ; Modulators, Demodulators, Limiters, Discriminators, Mixers:713.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Atomic and Molecular Physics:931.3 ; Special Purpose Instruments:943.3 ; Materials Science:951

2-s2.0-85056759616

Scopus

1.School of Electrical and Electronic Engineering, Nanyang Technological University, ,Singapore,639798,Singapore
2.IHP, Innovations for High Performance Microelectronics, ,15236,Germany
3.Southern University of Science and Technology, ,51805,China
4.TU Berlin, ,10587,Germany

Liang，Yuan,Yu，Hao,Boon，Chirn Chye,et al. D-Band Surface-Wave Modulator and Signal Source with 40 dB Extinction Ratio and 3.7mW Output Power in 65 nm CMOS[C]:Institute of Electrical and Electronics Engineers Inc.,2018:202-205.