A Fully-on-Chip Low-Voltage Low-Dropout Regulator with Negative Charge Pump

Tan，Yi; Zhan，Chenchang; Wang，Guanhua

10.1109/EDSSC.2018.8487086

2018-10-09

978-1-5386-6235-9

2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

1-2

6-8 June 2018

Shenzhen, China

Institute of Electrical and Electronics Engineers Inc.

A negative charge pump enhanced fully-on-chip low-dropout (LDO) regulator is proposed for low-voltage operation. The negative charge pump provides a negative voltage and works as the ground of the LDO controller, which enhances the performance significantly. The proposed LDO is implemented in a standard 65-nm CMOS process. It achieves 0.5V output with 0.6V input voltage. The current regulation range is 1uA-45mA. The quiescent current of the LDO is 21 μ A.

LDO low supply voltage negative charge pump

第一

英语

EI

[JCYJ20160530191008447] ; National Natural Science Foundation of China[61604067]

20184606070755

Charge pump circuits ; Solid state devices ; Voltage regulators

Electric Networks:703.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Control Equipment:732.1

2-s2.0-85056349683

Scopus

Department of Electrical and Electronic Engineering, Southern University of Science and Technology, ,Shenzhen,China

Tan，Yi,Zhan，Chenchang,Wang，Guanhua. A Fully-on-Chip Low-Voltage Low-Dropout Regulator with Negative Charge Pump[C]:Institute of Electrical and Electronics Engineers Inc.,2018:1-2.