A Transient-Improved Dynamic-Replica LDO Regulator with Bulk Modulation

Ma，Gangfeng; Zhan，Chengchang; Zhang，Yi

10.1109/EDSSC.2018.8487161

2018-10-09

978-1-5386-6235-9

2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

1-2

6-8 June 2018

Shenzhen, China

Institute of Electrical and Electronics Engineers Inc.

This paper presents a transient-improved dynamic-replica low-dropout (LDO) regulator. In the proposed LDO regulator, dynamic-replica and bulk modulation techniques are utilized to significantly improve regulation precision while maintaining good stability over a wide load capacitance range. Furthermore, differentiator-based spike coupling is used to improve the transient responses. A prototype of the proposed LDO is designed and fabricated in a standard 65-nm CMOS process. With 1.2V supply, it achieves 0.2V dropout voltage and supports a maximum of 50mA load current, while allowing for virtually any load capacitance value.

bulk modulation dynamic-replica load regulation load transient low-dropout (LDO) regulator

第一

英语

EI

[JCYJ20160530191008447] ; National Natural Science Foundation of China[61604067]

20184606069988

Capacitance ; Electric current regulators ; Modulation ; Solid state devices ; Voltage regulators

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Control Equipment:732.1

2-s2.0-85056324955

Scopus

Department of Electrical and Electronic Engineering, Southern University of Science and Technology, ,Shenzhen,China

Ma，Gangfeng,Zhan，Chengchang,Zhang，Yi. A Transient-Improved Dynamic-Replica LDO Regulator with Bulk Modulation[C]:Institute of Electrical and Electronics Engineers Inc.,2018:1-2.