题名 | Sub-Surface Layer of Silicon Singe Crystal Periodically Nanostructured by Near-Infrared Femtosecond Laser Pulses |
作者 | |
通讯作者 | Gnilitskyi,Iaroslav |
发表日期 | 2018-07-02
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会议录名称 | |
摘要 | Structure of subsurface layer beneath silicon single-crystal surface periodically nanostructured by femtosecond laser suggests significant contribution of laser-driven defect generation to formation of periodic surface ripples by few laser pulses in a broad fluence range. |
学校署名 | 其他
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语种 | 英语
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相关链接 | [Scopus记录] |
收录类别 | |
EI入藏号 | 20192006933163
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EI主题词 | Crystal structure
; Silicon wafers
; Infrared devices
; Laser pulses
; Single crystals
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EI分类号 | Semiconductor Devices and Integrated Circuits:714.2
; Lasers, General:744.1
; Crystalline Solids:933.1
; Crystal Lattice:933.1.1
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Scopus记录号 | 2-s2.0-85065608258
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来源库 | Scopus
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成果类型 | 会议论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/44255 |
专题 | 工学院_机械与能源工程系 |
作者单位 | 1.DISMI, University of Modena and Reggio Emilia (UNIMORE), ,Reggio Emilia,41122,Italy 2.Departmtent of Mechanical and Aerospace Engineering, College of Engineering, University of Missouri, ,Columbia,65211,United States 3.Electron Microscopy Core Facility, University of Missouri, ,Columbia,65211,United States 4.Department of Mechanical and Energy Engineering, Southern University of Science and Technology, ,Shenzhen, Guangdong,518055,China |
推荐引用方式 GB/T 7714 |
Gnilitskyi,Iaroslav,Gruzdev,Vitaly,He,Xiaoqing,et al. Sub-Surface Layer of Silicon Singe Crystal Periodically Nanostructured by Near-Infrared Femtosecond Laser Pulses[C],2018.
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条目包含的文件 | 条目无相关文件。 |
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