Multivariant Me ions design of Bi(Ni0.5Zr0.5)O3 amorphous thin film with high energy storage capability

Huang，Rui1; Wang，Hongye2; Tao，Cheng1; Hao，Hua1; Yao，Zhonghua1; Liu，Hanxing3; Cao，Minghe1

2023-03-15

10.1016/j.scriptamat.2022.115194

SCRIPTA MATERIALIA   影响因子和分区

1359-6462

1872-8456

The development of advanced pulse power technology proposes higher demand for dielectric energy storage materials. However, simultaneously obtaining high polarization and breakdown strength has become an obstacle to the development of dielectric materials. Herein, through the elaborate design of multivariant ions Me, BiMeO system thin film Bi(NiZr)O integrating high polarization, large breakdown strength and a localized heterostructure, generating an excellent energy storage density of 77.42 J cm and efficiency of 70.29% at 5.60 MV cm. The enhancive breakdown strength of Bi(NiZr)O thin film is mainly attributed to the amorphous phase induced by low preparation temperature and the oxygen vacancy bound by the valence change of Ni ion, which reduces leakage current density. This design approach is expected to be widespread for the development of BiMeO system thin film.

BiMeO3 Dielectric capacitor Energy storage Thin film

SCI ; EI

英语

通讯

Major Program of the Natural Science Foundation of China[51790490] ; Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory[XHT2020-011] ; Natural Science Foundation of China[51872213] ; Self-determined and Innovative Research Funds of SKLWUT[2021-PY-4] ; Sanya Science and Education Innovation Park of Wuhan University of Technology[2020KF0017]

Science & Technology - Other Topics ; Materials Science ; Metallurgy & Metallurgical Engineering

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering

WOS:000908418800001

PERGAMON-ELSEVIER SCIENCE LTD

20225013234431

Bismuth compounds ; Dielectric materials ; Electric breakdown ; Film preparation ; Ions ; Nickel compounds ; Perovskite ; Polarization ; Storage (materials) ; Thin films ; Zirconium compounds

Minerals:482.2 ; Energy Storage:525.7 ; Storage:694.4 ; Electricity: Basic Concepts and Phenomena:701.1 ; Dielectric Materials:708.1

MATERIALS SCIENCE

2-s2.0-85143616410

Scopus

1.State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology,Wuhan,430070,China
2.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
3.International School of Materials Science and Engineering,Wuhan University of Technology,Wuhan,430070,China

Huang，Rui,Wang，Hongye,Tao，Cheng,et al. Multivariant Me ions design of Bi(Ni0.5Zr0.5)O3 amorphous thin film with high energy storage capability[J]. SCRIPTA MATERIALIA,2023,226.

Huang，Rui.,Wang，Hongye.,Tao，Cheng.,Hao，Hua.,Yao，Zhonghua.,...&Cao，Minghe.(2023).Multivariant Me ions design of Bi(Ni0.5Zr0.5)O3 amorphous thin film with high energy storage capability.SCRIPTA MATERIALIA,226.

Huang，Rui,et al."Multivariant Me ions design of Bi(Ni0.5Zr0.5)O3 amorphous thin film with high energy storage capability".SCRIPTA MATERIALIA 226(2023).