A broadband CMOS amplifier in D band using pole-tuning technique with T-type network

Luo，Jiang1; He，Jin1; Feng，Guangyin2; Apriyana，Alit2; Huang，Qijun1; Yu，Hao3

10.1109/IEEE-IWS.2018.8400821

2018-06-29

978-1-5386-6347-9

2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings

1-3

6-10 May 2018

Chengdu, China

Institute of Electrical and Electronics Engineers Inc.

A novel pole-tuning technique with T-type network for interstage bandwidth extension is proposed in this paper. For verification, a four-stage amplifier based on the pole-tuning technique with T-type network has been designed and implemented in a 65-nm bulk CMOS technology. The fabricated prototype achieves a peak gain of 9.5 dB at 122 GHz with a 3-dB bandwidth of 26 GHz, while consuming a dc power of 62 mW. The saturation output power and the output P are 8.6 dBm and 4.6 dBm, respectively. The chip occupies a small silicon area of 0.27 mm including all testing pads.

bandwidth extension broadband amplifiers CMOS millimeter-wave (mm-wave) pole-tuning T-type network

其他

英语

EI

Wuhan University[2042014kf0238]

20183005609311

Bandwidth ; CMOS integrated circuits ; Light amplifiers ; Millimeter waves ; Poles

Structural Members and Shapes:408.2 ; Electromagnetic Waves:711 ; Amplifiers:713.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Information Theory and Signal Processing:716.1

2-s2.0-85050382548

Scopus

1.School of Physics and Technology, Wuhan University, ,Wuhan,430072,China
2.School of Electrical and Electronic Engineering, Nanyang Technological University, ,Singapore,639798,Singapore
3.Southern University of Science and Technology, ,Shenzhen,518055,China

Luo，Jiang,He，Jin,Feng，Guangyin,et al. A broadband CMOS amplifier in D band using pole-tuning technique with T-type network[C]:Institute of Electrical and Electronics Engineers Inc.,2018:1-3.