Fast food safety screening with CMOS high-sensitivity large-arrayed ISFET sensor

Jiang，Yu1,2; Coquet，Philippe1,2; Yu，Hao3

10.1109/BIOCAS.2017.8325174

2018-03-23

978-1-5090-5804-4

2017 IEEE Biomedical Circuits and Systems Conference, BioCAS 2017 - Proceedings

2018-January

1-4

19-21 Oct. 2017

Torino, Italy

Institute of Electrical and Electronics Engineers Inc.

This paper presents a CMOS ion-sensitive field-effect transistor (ISFET) sensor for Escherichia coli (E. coli) level detection. Non-ideal effects, such as passivation attenuation, trapped charge, and parasitic capacitance, lead to sensor non-uniformity issue. To alleviate it, a subthreshold pH-to-Time-to-Voltage Conversion (pH-TVC) readout structure with digital double sampling (DDS) and pixel level calibration are employed. The measured gain after calibration was 118.7 mV/pH with 0.01 pH resolution. In addition, three levels of E. coli samples were prepared and cultured for screening. Experimental result showed that E. coli levels can be differentiated within 4 hours. It had better time efficiency compared to conventional direct plate counting method (24-h). As such, the proposed high-sensitivity ISFET sensor has great potential in the portable, accelerated and low-cost food safety screening.

Calibration Logic gates Safety Transistors Passivation Microorganisms Testing

其他

英语

EI

20182905576296

Calibration ; Capacitance ; CMOS integrated circuits ; Escherichia coli ; Ion sensitive field effect transistors ; Screening

Medicine and Pharmacology:461.6 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Operations:802.3

2-s2.0-85050010503

Scopus

1.School of Electrical and Electronic Engineering, Nanyang Technological University, ,Singapore,Singapore
2.CINTRA CNRS/NTU/THALES, UMI 3288, ,Singapore,50 Nanyang Drive,637553,Singapore
3.Southern University of Science and Technology, ,China

Jiang，Yu,Coquet，Philippe,Yu，Hao. Fast food safety screening with CMOS high-sensitivity large-arrayed ISFET sensor[C]:Institute of Electrical and Electronics Engineers Inc.,2018:1-4.