Quantized Field-Effect Tunneling between Topological Edge or Interface States

Xu, Yong1,2; Chen, Yan-Ru1,2; Wang, Jun3; Liu, Jun-Feng1,2; Ma, Zhongshui4,5

2019-11-12

10.1103/PhysRevLett.123.206801

PHYSICAL REVIEW LETTERS   影响因子和分区

0031-9007

1079-7114

We study the tunneling through a two-dimensional topological insulator with topologically protected edge states. It is shown that the tunneling probability can be quantized in a broad parameter range, 0 or 1, tuned by an applied transverse electric field. Based on this field-effect tunneling, we propose two types of topological transistors based on helical edge or interface states of quantum spin Hall insulators separately. The quantized tunneling conductance is obtained and shown to be robust against nonmagnetic disorders. Usually, the topological transition is necessary in the operation of topological transistors. These findings provide a new strategy for the design of topological transistors without topological transitions.

SCI ; EI

英语

通讯

National Basic Research Program (NBRP) of China[2012CB921300]

Physics

Physics, Multidisciplinary

WOS:000495979600011

AMER PHYSICAL SOC

20194707711121

Electric fields ; Field effect transistors ; Quantum Hall effect ; Quantum theory ; Scanning tunneling microscopy ; Spin Hall effect ; Topological insulators ; Topology

Electricity: Basic Concepts and Phenomena:701.1 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4 ; Classical Physics; Quantum Theory; Relativity:931 ; Quantum Theory; Quantum Mechanics:931.4

PHYSICS

Web of Science

1.Guangzhou Univ, Sch Phys & Elect Engn, Guangzhou 510006, Guangdong, Peoples R China
2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
3.Southeast Univ, Dept Phys, Nanjing 210096, Jiangsu, Peoples R China
4.Peking Univ, Sch Phys, Beijing 100871, Peoples R China
5.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

Xu, Yong,Chen, Yan-Ru,Wang, Jun,et al. Quantized Field-Effect Tunneling between Topological Edge or Interface States[J]. PHYSICAL REVIEW LETTERS,2019,123(20).

Xu, Yong,Chen, Yan-Ru,Wang, Jun,Liu, Jun-Feng,&Ma, Zhongshui.(2019).Quantized Field-Effect Tunneling between Topological Edge or Interface States.PHYSICAL REVIEW LETTERS,123(20).

Xu, Yong,et al."Quantized Field-Effect Tunneling between Topological Edge or Interface States".PHYSICAL REVIEW LETTERS 123.20(2019).