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题名

Enhancing the fabrication yield of NV centers in diamond by pre-doping using molecular dynamics simulation

作者
发表日期
2023-02-01
DOI
发表期刊
ISSN
0925-9635
EISSN
1879-0062
卷号132
摘要
Improving the yield of nitrogen-vacancy (NV) color centers at the nanoscale can provide a deeper understanding of the formation mechanism of NV color centers and boost the application prospective. Molecular dynamics (MD) simulation of nitrogen ion irradiation was first used to study the dependence of the implanted N configurations on incidence angle and annealing temperature, hence determine the most appropriate conditions for NV color centers formation. A novel method of pre-doping the initial bulk diamond substrate with N impurities was proved to successfully prepare NV color centers by using low-energy nitrogen ion implantation and subsequent annealing. Simulation results indicated that NV color centers can create in a doped model at about 1000 ppm with yields up to 10 %. It should be noted that the optimal time of high-temperature annealing needs to be optimized to obtain different kinds of NV color centers for different applications. Finally, the changes inside the substrate under high fluence implantation are analyzed. The enhancement for the yield of NV centers in nano -scale is crucial for strengthening future quantum metrology applications.
关键词
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
其他
资助项目
National Natural Science Foundation of China["52035009","51761135106"] ; State Key Laboratory of Precision Measuring Technology and Instruments[Pilt1705] ; Ministry of Education of China[B07014]
WOS研究方向
Materials Science ; Physics
WOS类目
Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号
WOS:000924876400001
出版者
EI入藏号
20230313386433
EI主题词
Annealing ; Color ; Color centers ; Diamonds ; High temperature applications ; Ion bombardment ; Nanotechnology ; Nitrogen
EI分类号
Gems:482.2.1 ; Heat Treatment Processes:537.1 ; Light/Optics:741.1 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Chemical Products Generally:804 ; High Energy Physics:932.1 ; Crystalline Solids:933.1
ESI学科分类
MATERIALS SCIENCE
来源库
Web of Science
引用统计
被引频次[WOS]:8
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/450764
专题工学院_电子与电气工程系
作者单位
1.State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, China
2.State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, China
3.State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, China
4.State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, China
5.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
6.Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
推荐引用方式
GB/T 7714
Wei,Zhao,Zongwei,Xu,Fei,Ren,et al. Enhancing the fabrication yield of NV centers in diamond by pre-doping using molecular dynamics simulation[J]. DIAMOND AND RELATED MATERIALS,2023,132.
APA
Wei,Zhao,Zongwei,Xu,Fei,Ren,Bing,Dong,Junlei,Zhao,&Pengfei,Wang.(2023).Enhancing the fabrication yield of NV centers in diamond by pre-doping using molecular dynamics simulation.DIAMOND AND RELATED MATERIALS,132.
MLA
Wei,Zhao,et al."Enhancing the fabrication yield of NV centers in diamond by pre-doping using molecular dynamics simulation".DIAMOND AND RELATED MATERIALS 132(2023).
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