Revealing the decisive factors of the lattice thermal conductivity reduction by electron-phonon interactions in half-Heusler semiconductors

Dai, Shengnan1; Liu, Changdong1; Ning, Jinyan1; Fu, Chenguang2; Xi, Jinyang1,3; Yang, Jiong1,3; Zhang, Wenqing4,5

2023-02-01

10.1016/j.mtphys.2023.100993

Materials Today Physics   影响因子和分区

2542-5293

The role of electron-phonon (EP) scattering in lattice thermal conductivity (kappa L) of thermoelectric material has not been fully studied until now, especially for the decisive factors that influence the reduction of kappa L. To address this issue, we report the effect of EP interactions on kappa L at a series of temperatures and carrier concentrations for 18 half-Heusler compounds. Among all the compounds investigated, the hole-doped TiCoSb and the electron-doped ZrIrSb have the largest kappa L reductions (32% & 20%) by EP interactions at 300 K, under the carrier concentration of 1021 cm-3. Detailed analyses reveal that the system with strong EP coupling strength and high electronic density of states at the Fermi level (N (EF)) favor the kappa L reduction, because these two factors are beneficial for EP scattering rates. And a high N (EF) can be caused by a high carrier concentration and/or a large effective mass. Temperature is another factor that affects the reduction of kappa L by EP interactions due to its imbalance influence on EP and phonon-phonon (PP) scatterings. Furthermore, after considering the influences from the aliovalent doping and grain boundary, the EP interactions still play a non-negligible role on kappa L reduction, especially at low temperatures and high carrier concentrations. Our work provides a complete picture for understanding the mechanism of EP interactions in material's thermal transport.

Electron -phonon interaction Lattice thermal conductivity Phonon -phonon interaction Half-Heusler

SCI ; EI

英语

其他

Key Research Project of Zhejiang Laboratory[2021PE0AC02] ; National Key Research and Development Program of China[2021YFB3502200] ; Nat- ural Science Foundation of China["52172216","92163212"] ; Guangdong Innovation Research Team Project[2017ZT07C062] ; Shenzhen Municipal Key-Lab program[ZDSYS20190902092905285] ; Guangdong Provincial Key-Lab program[2019B030301001]

Materials Science ; Physics

Materials Science, Multidisciplinary ; Physics, Applied

WOS:000927490300001

ELSEVIER

20230513499105

Boron compounds ; Carrier concentration ; Crystal lattices ; Electrons ; Grain boundaries ; Semiconductor doping ; Thermal conductivity ; Titanium compounds ; Zirconium compounds

Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Atomic and Molecular Physics:931.3 ; Quantum Theory; Quantum Mechanics:931.4 ; Solid State Physics:933 ; Crystal Lattice:933.1.1

Web of Science

1.Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China
2.Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
3.Zhejiang Lab, Hangzhou 311100, Zhejiang, Peoples R China
4.Southern Univ Sci & Technol, Shenzhen Municipal Key Lab Adv Quantum Mat & Devic, Guangdong Prov Key Lab Computat Sci & Mat Design, Shenzhen 518055, Peoples R China
5.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China

Dai, Shengnan,Liu, Changdong,Ning, Jinyan,et al. Revealing the decisive factors of the lattice thermal conductivity reduction by electron-phonon interactions in half-Heusler semiconductors[J]. Materials Today Physics,2023,31.

Dai, Shengnan.,Liu, Changdong.,Ning, Jinyan.,Fu, Chenguang.,Xi, Jinyang.,...&Zhang, Wenqing.(2023).Revealing the decisive factors of the lattice thermal conductivity reduction by electron-phonon interactions in half-Heusler semiconductors.Materials Today Physics,31.

Dai, Shengnan,et al."Revealing the decisive factors of the lattice thermal conductivity reduction by electron-phonon interactions in half-Heusler semiconductors".Materials Today Physics 31(2023).