Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching

Zhang，Linfeng; Wu，Bing; Zhang，Yi; Deng，Hui

2023-05-30

10.1016/j.apsusc.2023.156786

APPLIED SURFACE SCIENCE   影响因子和分区

0169-4332

1873-5584

Plasma-based atom-selective etching (PASE) of GaN is conducted to realize the highly efficient planarization of the GaN surface. Inductively coupled plasma with high temperature and high concentration of radicals is used as the source of PASE. The non-toxic carbon tetrafluoride is chosen over chlorine as the reaction gas, and the volatility of the etching products will be improved at high temperatures in the PASE of GaN. After 2 min of PASE, the GaN surface roughness is reduced from Sa 135.8 nm to Sa 0.527 nm. The material removal rate of PASE of GaN is measured to be 93.01 μm/min, thousands of times higher than that of the conventional chemical mechanical polishing method. The crystal structure of the GaN subsurface is well-ordered without any damage or defects. PASE is thus proven to be a non-destructive etching method. In this study, the effects of radio frequency power and reaction gas flow rate on PASE are also investigated. Surface temperature and concentration of radicals are found to be the critical factors in the PASE of GaN.

GaN PASE Plasma etching Subsurface damage Surface roughness

SCI ; EI

英语

第一 ; 通讯

National Natural Science Foundation of China["52035009","52005243"] ; Natural Science Foundation of Guangdong Province[2023A1515011461] ; Science, Technology and Innovation Commission of Shenzhen Municipality , Shenzhen, China[JCYJ20210324120402007] ; null[JCYJ20200109141003910]

Chemistry ; Materials Science ; Physics

Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter

WOS:001020694400001

ELSEVIER

20230913658363

Atoms ; Chemical mechanical polishing ; Crystal structure ; Flow of gases ; Gallium nitride ; III-V semiconductors ; Inductively coupled plasma ; Plasma etching

Gas Dynamics:631.1.2 ; Semiconducting Materials:712.1 ; Chemical Reactions:802.2 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Atomic and Molecular Physics:931.3 ; Plasma Physics:932.3 ; Crystal Lattice:933.1.1

MATERIALS SCIENCE

2-s2.0-85149057140

Scopus

Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,No. 1088, Xueyuan Road, Guangdong,518055,China

Zhang，Linfeng,Wu，Bing,Zhang，Yi,et al. Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching[J]. APPLIED SURFACE SCIENCE,2023,620.

Zhang，Linfeng,Wu，Bing,Zhang，Yi,&Deng，Hui.(2023).Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching.APPLIED SURFACE SCIENCE,620.

Zhang，Linfeng,et al."Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching".APPLIED SURFACE SCIENCE 620(2023).