中文版 | English
题名

Thermally induced surface faceting on heteroepitaxial layers

作者
通讯作者Li,Lei
发表日期
2023-02-21
DOI
发表期刊
ISSN
0021-8979
EISSN
1089-7550
卷号133期号:7页码:075703
摘要

Heteroepitaxial semiconductors such as Ge-on-Si are widely used in current opto-electronic and electronic applications, and one of the most important challenges for epitaxial Ge-on-Si is threading dislocations (TDs) in Ge layers caused by lattice mismatch between Ge and Si. Here, apart from traditional wet chemical etching, we report a convenient approach to evaluate the threading dislocation densities in heteroepitaxial layers through vacuum thermal annealing. More importantly, the controversial origin of thermal annealing induced pits on a Ge surface was addressed in this work. By combining both experiments and density functional theory (DFT) calculations, we find that the {111} facets defined thermal pits on Ge (001) surfaces are mainly caused by threading dislocation activation. Ge adatoms at the TD segments sublimate preferentially than the ones on dislocation-free Ge (001) surface regions, and its further evolution is determined by surface energies of {111} facets, leading to a construction of inverted pyramid-shaped thermal pits.

相关链接[Scopus记录]
收录类别
SCI ; EI
语种
英语
学校署名
第一 ; 通讯
资助项目
National Natural Science Foundation of Guangdong Province[2022A1515010216] ; National Natural Science Foundation of China[52172294]
WOS研究方向
Physics
WOS类目
Physics, Applied
WOS记录号
WOS:000958356700012
出版者
EI入藏号
20230913647563
EI主题词
Density Functional Theory ; Epitaxial Growth ; Wet Etching
EI分类号
Chemical Operations:802.3 ; Probability Theory:922.1 ; Atomic And Molecular Physics:931.3 ; Quantum Theory ; Quantum Mechanics:931.4 ; Crystal Lattice:933.1.1 ; Crystal Growth:933.1.2
ESI学科分类
PHYSICS
Scopus记录号
2-s2.0-85148770796
来源库
Scopus
引用统计
被引频次[WOS]:5
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/497254
专题工学院_材料科学与工程系
作者单位
1.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
2.Department of Materials Engineering,The University of British Columbia (UBC),Vancouver,V6T 1Z4,Canada
第一作者单位材料科学与工程系
通讯作者单位材料科学与工程系
第一作者的第一单位材料科学与工程系
推荐引用方式
GB/T 7714
Zhang,Yiwen,Zhou,Chuan,Zhu,Ying,et al. Thermally induced surface faceting on heteroepitaxial layers[J]. JOURNAL OF APPLIED PHYSICS,2023,133(7):075703.
APA
Zhang,Yiwen,Zhou,Chuan,Zhu,Ying,Xia,Guangrui ,Li,Lei,&Wen,Rui Tao.(2023).Thermally induced surface faceting on heteroepitaxial layers.JOURNAL OF APPLIED PHYSICS,133(7),075703.
MLA
Zhang,Yiwen,et al."Thermally induced surface faceting on heteroepitaxial layers".JOURNAL OF APPLIED PHYSICS 133.7(2023):075703.
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