题名 | Thermally induced surface faceting on heteroepitaxial layers |
作者 | |
通讯作者 | Li,Lei |
发表日期 | 2023-02-21
|
DOI | |
发表期刊 | |
ISSN | 0021-8979
|
EISSN | 1089-7550
|
卷号 | 133期号:7页码:075703 |
摘要 | Heteroepitaxial semiconductors such as Ge-on-Si are widely used in current opto-electronic and electronic applications, and one of the most important challenges for epitaxial Ge-on-Si is threading dislocations (TDs) in Ge layers caused by lattice mismatch between Ge and Si. Here, apart from traditional wet chemical etching, we report a convenient approach to evaluate the threading dislocation densities in heteroepitaxial layers through vacuum thermal annealing. More importantly, the controversial origin of thermal annealing induced pits on a Ge surface was addressed in this work. By combining both experiments and density functional theory (DFT) calculations, we find that the {111} facets defined thermal pits on Ge (001) surfaces are mainly caused by threading dislocation activation. Ge adatoms at the TD segments sublimate preferentially than the ones on dislocation-free Ge (001) surface regions, and its further evolution is determined by surface energies of {111} facets, leading to a construction of inverted pyramid-shaped thermal pits. |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | National Natural Science Foundation of Guangdong Province[2022A1515010216]
; National Natural Science Foundation of China[52172294]
|
WOS研究方向 | Physics
|
WOS类目 | Physics, Applied
|
WOS记录号 | WOS:000958356700012
|
出版者 | |
EI入藏号 | 20230913647563
|
EI主题词 | Density Functional Theory
; Epitaxial Growth
; Wet Etching
|
EI分类号 | Chemical Operations:802.3
; Probability Theory:922.1
; Atomic And Molecular Physics:931.3
; Quantum Theory
; Quantum Mechanics:931.4
; Crystal Lattice:933.1.1
; Crystal Growth:933.1.2
|
ESI学科分类 | PHYSICS
|
Scopus记录号 | 2-s2.0-85148770796
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:5
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/497254 |
专题 | 工学院_材料科学与工程系 |
作者单位 | 1.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China 2.Department of Materials Engineering,The University of British Columbia (UBC),Vancouver,V6T 1Z4,Canada |
第一作者单位 | 材料科学与工程系 |
通讯作者单位 | 材料科学与工程系 |
第一作者的第一单位 | 材料科学与工程系 |
推荐引用方式 GB/T 7714 |
Zhang,Yiwen,Zhou,Chuan,Zhu,Ying,et al. Thermally induced surface faceting on heteroepitaxial layers[J]. JOURNAL OF APPLIED PHYSICS,2023,133(7):075703.
|
APA |
Zhang,Yiwen,Zhou,Chuan,Zhu,Ying,Xia,Guangrui ,Li,Lei,&Wen,Rui Tao.(2023).Thermally induced surface faceting on heteroepitaxial layers.JOURNAL OF APPLIED PHYSICS,133(7),075703.
|
MLA |
Zhang,Yiwen,et al."Thermally induced surface faceting on heteroepitaxial layers".JOURNAL OF APPLIED PHYSICS 133.7(2023):075703.
|
条目包含的文件 | 条目无相关文件。 |
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