南方科技大学知识苑(SUSTech KC): Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators

题名	Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators
作者	Chen, Rui1,2 ; Sun, Hai-Peng1,3 ; Gu, Mingqiang1 ; Hua, Chun-Bo 4; Liu, Qihang1,5 ; Lu, Hai-Zhou1,2,6 ; Xie, X.C.7,8,9
通讯作者	Liu, Qihang; Lu, Hai-Zhou
发表日期	2022-06-22
DOI	10.48550/arXiv.2206.10905
发表期刊	arXiv 影响因子和分区
ISSN	2095-5138
EISSN	2331-8422
卷号	11 期号:2
摘要	The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi2Te4 thinfilms under perpendicular electric fields [Gao et al., Nature 595, 521 (2021)]. Here, we reveal a universal origin of the layer Hall effect in terms of the so-called hidden Berry curvature, as well as material design principles. Hence, it gives rise to zero Berry curvature in momentum space but nonzero layer-locked hidden Berry curvature in real space. We show that compared to that of a trivial insulator, the layer Hall effect is significantly enhanced in antiferromagnetic topological insulators. Our universal picture provides a paradigm for revealing the hidden physics as a result of the interplay between the global and local symmetries, and can be generalized in various scenarios. © 2022, CC BY.
关键词	antiferromagnetic insulator axion insulator hidden Berry curvature layer Hall effect quantum transport
相关链接	[Scopus记录]
收录类别	EI
语种	英语
学校署名	第一 ; 通讯
出版者	arXiv
EI入藏号	20220214293
EI主题词	Antiferromagnetic materials ; Antiferromagnetism ; Bismuth compounds ; Electric fields ; Hall effect ; Manganese compounds ; Tellurium compounds
EI分类号	Electricity: Basic Concepts and Phenomena:701.1 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Magnetic Materials:708.4 ; Agricultural Products:821.4
Scopus记录号	2-s2.0-85183709549
来源库	EV Compendex
引用统计	被引频次[WOS]：0
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/497512
专题	理学院_物理系量子科学与工程研究院
作者单位	1.Shenzhen Institute for Quantum Science and Engineering, Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen; 518055, China 2.International Quantum Academy, Shenzhen; 518048, China 3.Institute for Theoretical Physics and Astrophysics, University of Würzburg, Wurzburg; 97074, Germany 4.School of Electronic and Information Engineering, Hubei University of Science and Technology, Xianning; 437100, China 5.Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen; 518055, China 6.Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen; 518055, China 7.International Center for Quantum Materials, School of Physics, Peking University, Beijing; 100871, China 8.Collaborative Innovation Center of Quantum Matter, Beijing; 100871, China 9.CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing; 100190, China
第一作者单位	物理系; 量子科学与工程研究院
通讯作者单位	物理系; 量子科学与工程研究院; 南方科技大学
第一作者的第一单位	物理系; 量子科学与工程研究院
推荐引用方式 GB/T 7714	Chen, Rui,Sun, Hai-Peng,Gu, Mingqiang,et al. Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators[J]. arXiv,2022,11(2).
APA	Chen, Rui.,Sun, Hai-Peng.,Gu, Mingqiang.,Hua, Chun-Bo.,Liu, Qihang.,...&Xie, X.C..(2022).Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators.arXiv,11(2).
MLA	Chen, Rui,et al."Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators".arXiv 11.2(2022).