GaAs Nanowire Photodetectors Based on Au Nanoparticles Modification

Lin, Fengyuan1; Cui, Jinzhi1; Zhang, Zhihong1; Wei, Zhipeng1; Hou, Xiaobing1; Meng, Bingheng1; Liu, Yanjun2; Tang, Jilong1; Li, Kexue1; Liao, Lei3; Hao, Qun1,4

2023-02-01

10.3390/ma16041735

MATERIALS   影响因子和分区

1996-1944

A high-performance GaAs nanowire photodetector was fabricated based on the modification of Au nanoparticles (NPs). Au nanoparticles prepared by thermal evaporation were used to modify the defects on the surface of GaAs nanowires. Plasmons and Schottky barriers were also introduced on the surface of the GaAs nanowires, to enhance their light absorption and promote the separation of carriers inside the GaAs nanowires. The research results show that under the appropriate modification time, the dark current of GaAs nanowire photodetectors was reduced. In addition, photocurrent photodetectors increased from 2.39 x 10(-10) A to 1.26 x 10(-9) A. The responsivity of GaAs nanowire photodetectors correspondingly increased from 0.569 A center dot W-1 to 3.047 A center dot W-1. The reasons for the improvement of the photodetectors' performance after modification were analyzed through the energy band theory model. This work proposes a new method to improve the performance of GaAs nanowire photodetectors.

GaAs nanowires photodetectors Au nanoparticles plasmons Schottky barriers

SCI ; EI

英语

其他

National Natural Science Foundation of China["61904017","12074045","62027820","11804335","U22A2081"] ; Youth Foundation of Changchun University of Science and Technology[XQNJJ-2018-18] ; "111" Project of China[D17017]

Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering ; Physics

Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering ; Physics, Applied ; Physics, Condensed Matter

WOS:000940759900001

MDPI

20231013672981

Gallium arsenide ; III-V semiconductors ; Light absorption ; Nanowires ; Photodetectors ; Photons ; Plasmons ; Schottky barrier diodes ; Semiconducting gallium ; Thermal evaporation

Semiconducting Materials:712.1 ; Single Element Semiconducting Materials:712.1.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3 ; Plasma Physics:932.3 ; Solid State Physics:933

Web of Science

1.Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China
2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
3.Hunan Univ, Coll Semicond, Coll Integrated Circuits, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Peoples R China
4.Beijing Inst Technol, Sch Optoelect, Beijing 100081, Peoples R China

Lin, Fengyuan,Cui, Jinzhi,Zhang, Zhihong,et al. GaAs Nanowire Photodetectors Based on Au Nanoparticles Modification[J]. MATERIALS,2023,16(4).

Lin, Fengyuan.,Cui, Jinzhi.,Zhang, Zhihong.,Wei, Zhipeng.,Hou, Xiaobing.,...&Hao, Qun.(2023).GaAs Nanowire Photodetectors Based on Au Nanoparticles Modification.MATERIALS,16(4).

Lin, Fengyuan,et al."GaAs Nanowire Photodetectors Based on Au Nanoparticles Modification".MATERIALS 16.4(2023).