Free-Molecular-Flow Modulated Synthesis of Hexagonal Boron Nitride Monolayers

Wang, Weijun1; Shi, Run1,2,3; Wang, Jingwei1,2,3; Shen, Nan1; Wang, Yu1; Zhang, Haichao1; Chandrashekar, Bananakere Nanjegowda1; Cai, Xiangbin2,3; Zhu, Weiwei1; Amini, Abbas4; Wang, Ning2,3; Cheng, Chun1

2019-12

10.1021/acs.cgd.9b00811

CRYSTAL GROWTH & DESIGN   影响因子和分区

1528-7483

1528-7505

Atomically smooth hexagonal boron nitride (h-BN) films are needed for emerging applications of two-dimensional (2D) devices based on vander Waals heterostructures. Currently, it is difficult to prepare high-quality, large-area single crystalline h-BN monolayers by standard chemical vapor deposition. Here, we develop a free-molecular-flow growth model for h-BN synthesis by constructing a narrow gap within Cu/supporting substrates stacking, improving upon earlier studies by increasing domain sizes up to similar to 80 mu m. Further, the edges of h-BN varying from negative-curved to straight, positive-curved, and even round were reliably modified by varying the precursor heating temperature. Moreover, the merging processes of h-BN films are experimentally investigated, demonstrating the Bravais law is applicable for the coalescence of h-BN domains. This work not only offers a promising strategy for high-quality h-BN growth and insight into its growth dynamics which sheds light on reliable edge controllability and possible properties modification of other 2D crystals, but also enriches the understanding of the classical crystal growth theory and extends its applicability into the growth and evolution of 2D crystals.

SCI ; EI

英语

第一 ; 通讯

Shenzhen Science and Technology Innovation Committee Maker Project[GRCK2017082316224369]

Chemistry ; Crystallography ; Materials Science

Chemistry, Multidisciplinary ; Crystallography ; Materials Science, Multidisciplinary

WOS:000501621100021

AMER CHEMICAL SOC

20194707703864

Chemical vapor deposition ; Crystals ; III-V semiconductors ; Monolayers ; Nitrides ; Van der Waals forces

Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; Crystalline Solids:933.1

CHEMISTRY

Web of Science

1.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Clear Water Bay, Hong Kong, Peoples R China
3.Hong Kong Univ Sci & Technol, Ctr 1D 2D Quantum Mat, Kowloon, Clear Water Bay, Hong Kong, Peoples R China
4.Western Sydney Univ, Ctr Infrastruct Engn, Kingswood, NSW 2751, Australia

Wang, Weijun,Shi, Run,Wang, Jingwei,et al. Free-Molecular-Flow Modulated Synthesis of Hexagonal Boron Nitride Monolayers[J]. CRYSTAL GROWTH & DESIGN,2019,19(12):7007-7014.

Wang, Weijun.,Shi, Run.,Wang, Jingwei.,Shen, Nan.,Wang, Yu.,...&Cheng, Chun.(2019).Free-Molecular-Flow Modulated Synthesis of Hexagonal Boron Nitride Monolayers.CRYSTAL GROWTH & DESIGN,19(12),7007-7014.

Wang, Weijun,et al."Free-Molecular-Flow Modulated Synthesis of Hexagonal Boron Nitride Monolayers".CRYSTAL GROWTH & DESIGN 19.12(2019):7007-7014.