Sulfur-Containing Bent N-Heteroacenes

Ding, Fangwei1; Xia, Debin1; Sun, Weipeng2,3; Chen, Wei1; Yang, Yulin1; Lin, Kaifeng1; Zhang, Feibao3; Guo, Xugang2

2019

10.1002/chem.201902984

Chemistry - A European Journal   影响因子和分区

15213765

1521-3765

A series of novel sulfur-containing bent N-heteroacenes were constructed and characterized by NMR and UV/Vis spectroscopy, cyclic voltammetry, and single-crystal X-ray diffraction. By introducing sulfur-containing groups (thio, sulfinyl, and sulfonyl) into bent azaacenes, their electronic delocalization was improved and frontier energy levels were modulated. The target products displayed tunable optical and electronic properties through altering the valence of sulfur and fused length of the azaacenes. For the first time, typical products were utilized as organic field effect transistor materials, affording promising results.
© 2019 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim

azaacenes heteroacenes energy level modulation organic field effect transistors sulfur

SCI ; IC ; EI

英语

其他

Heilongjiang University[] ; Fundamental Research Funds for the Central Universities[HIT.NSRIF.2019038] ; [JCYJ20170817105905899] ; China Postdoctoral Science Foundation[2016M601424,2017T100236] ; Natural Science Foundation of Heilongjiang Province[QC2017055] ; Heilongjiang Postdoctoral Science Foundation[LBH-Z16059] ; National Natural Science Foundation of China[51603055]

Chemistry

Chemistry, Multidisciplinary

WOS:000501213200015

Wiley-VCH Verlag

20194507649215

Cyclic voltammetry ; Electronic properties ; Single crystals ; Sulfur ; Ultraviolet visible spectroscopy

Semiconductor Devices and Integrated Circuits:714.2 ; Electrochemistry:801.4.1 ; Chemical Products Generally:804 ; Crystalline Solids:933.1

CHEMISTRY

Web of Science

1.MIIT Key Laboratory of Critical Materials Technology for, New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin; 150001, China
2.Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen; Guangdong; 518055, China
3.Key Laboratory of OrganosiliconChemistry and Material Technology, of Ministry of Education, Hangzhou Normal University, Hangzhou; 311121, China

Ding, Fangwei,Xia, Debin,Sun, Weipeng,et al. Sulfur-Containing Bent N-Heteroacenes[J]. Chemistry - A European Journal,2019,25(66):15106-15111.

Ding, Fangwei.,Xia, Debin.,Sun, Weipeng.,Chen, Wei.,Yang, Yulin.,...&Guo, Xugang.(2019).Sulfur-Containing Bent N-Heteroacenes.Chemistry - A European Journal,25(66),15106-15111.

Ding, Fangwei,et al."Sulfur-Containing Bent N-Heteroacenes".Chemistry - A European Journal 25.66(2019):15106-15111.