| 题名 | Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components |
| 作者 | |
| 通讯作者 | Chen, Rui; Wei, Zhipeng |
| 发表日期 | 2019-11-21
|
| DOI | |
| 发表期刊 | |
| ISSN | 20462069
|
| EISSN | 2046-2069
|
| 卷号 | 9期号:65页码:38114-38118 |
| 摘要 | III-V ternary alloy quantum-wells have become a hot topic in recent years. Especially, GaAs/GaAsSb quantum wells have attracted increasing attention due to their numerous applications in the field of near-infrared optoelectronic devices. With the further reduction of dimensions, GaAs/GaAsSb nanowires show many special properties compared to their quantum well structures. In this work, GaAs/GaAs1-xSbx/GaAs coaxial single quantum-well nanowires with different Sb composition were grown by molecular beam epitaxy. The band structure and the optical properties were investigated through power-dependent and temperature-dependent photoluminescence measurement. It has been found that a deeper quantum well is created with the increase of Sb component. Thanks to the deeper quantum well, more effective electron confinement has been realized, the emission from the sample can still be detected up to room temperature. The different trend of peak position and shape at various temperatures also supports the improved temperature stability of the samples. These results will be beneficial for the design of alloy quantum wells, and will facilitate the development of alloy quantum-well based devices. |
| 相关链接 | [来源记录] ; [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 通讯
|
| 资助项目 | Shenzhen Science and Technology Innovation Commission[JCYJ20180305180553701]
; Shenzhen Science and Technology Innovation Commission[KQJSCX20170726145748]
; Shenzhen Science and Technology Innovation Commission[KQTD2015071710313656]
|
| WOS研究方向 | Chemistry
|
| WOS类目 | Chemistry, Multidisciplinary
|
| WOS记录号 | WOS:000501604800047
|
| 出版者 | |
| EI入藏号 | 20194907774440
|
| EI主题词 | Gallium arsenide
; III-V semiconductors
; Infrared devices
; Molecular beam epitaxy
; Nanowires
; Optical properties
; Optoelectronic devices
; Semiconducting gallium
; Ternary alloys
|
| EI分类号 | Single Element Semiconducting Materials:712.1.1
; Semiconductor Devices and Integrated Circuits:714.2
; Light/Optics:741.1
; Optical Devices and Systems:741.3
; Nanotechnology:761
; Chemical Products Generally:804
; Solid State Physics:933
; Crystal Growth:933.1.2
|
| ESI学科分类 | CHEMISTRY
|
| 来源库 | Web of Science
|
| 引用统计 |
被引频次[WOS]：7
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/50815 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | 1.Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Laser, Changchun 130022, Jilin, Peoples R China 2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China |
| 通讯作者单位 | 电子与电气工程系 |
| 推荐引用方式 GB/T 7714 |
Li, Haolin,Tang, Jilong,Pang, Guotao,et al. Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components[J]. RSC ADVANCES,2019,9(65):38114-38118.
|
| APA |
Li, Haolin.,Tang, Jilong.,Pang, Guotao.,Wang, Dengkui.,Fang, Xuan.,...&Wei, Zhipeng.(2019).Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components.RSC ADVANCES,9(65),38114-38118.
|
| MLA |
Li, Haolin,et al."Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components".RSC ADVANCES 9.65(2019):38114-38118.
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| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
| 10.1039@c9ra08451g.p（680KB） | -- | -- | 开放获取 | -- | 浏览 | |
| Li-2019-Optical char（680KB） | -- | -- | 开放获取 | -- | 浏览 | |
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