Hierarchical 3D Dandelion Flower-Like Gan Microsphere for Humidity Sensor with Excellent Linearity Response

Veerappan, Manimuthu1,2; Leng, Xiaohui1; Rajendran, Ramachandran1; Wang, Fei1,2

10.1109/TRANSDUCERS.2019.8808378

2019

2167-0013

978-1-5386-8105-3

20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

1690-1693

23-27 June 2019

Berlin, Germany

345 E 47TH ST, NEW YORK, NY 10017 USA

Institute of Electrical and Electronics Engineers Inc.

This paper presents a hierarchical 3D dandelion flower-like gallium nitride microsphere via the ammonothermal-conjugated ammonification method for practical humidity sensors. We have developed ammonothermal-conjugated ammonification hybrid approach using oleylamine for morphology determination. Sensitivity higher than three orders of magnitude with excellent linearity has been achieved within the whole measurement range. We have also proposed a charge transfer mechanism for the GaN microsphere humidity sensors and studied the influence of the defects degree on the sensing performance of the GaN humidity sensors.
© 2019 IEEE.

GaN microspheres sono-assisted ammonothermal ammonification resistive humidity sensor

第一

英语

EI ; CPCI-S

Shenzhen Science and Technology Innovation Committee[JCYJ20170412154426330][KQTD2015071710313656]

WOS:000539487000427

20193707425348

Actuators ; Charge transfer ; Gallium nitride ; Humidity sensors ; III-V semiconductors ; Microspheres ; Microsystems

Meteorological Instrumentation:443.2 ; Control Equipment:732.1 ; Control Instrumentation:732.2 ; Chemical Reactions:802.2

EV Compendex

1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
2.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China

Veerappan, Manimuthu,Leng, Xiaohui,Rajendran, Ramachandran,et al. Hierarchical 3D Dandelion Flower-Like Gan Microsphere for Humidity Sensor with Excellent Linearity Response[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:Institute of Electrical and Electronics Engineers Inc.,2019:1690-1693.