High Sensitivity Gas Sensor Based on Porous GaN Nanorods with Excellent High-Temperature Stability

Zhang, Mingxiang1,2; Zhao, Changhui1,2; Gong, Huimin2; Niu, Gaoqiang1,2; Wang, Fei1,2,3,4,5

10.1109/TRANSDUCERS.2019.8808695

2019

2167-0013

978-1-5386-8105-3

20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

1369-1372

23-27 June 2019

Berlin, Germany

345 E 47TH ST, NEW YORK, NY 10017 USA

Institute of Electrical and Electronics Engineers Inc.

In this paper, porous GaN nanorods are prepared successfully by hydrothermal method and are applied for gas sensor via a simple process. Gas-sensing measurements demonstrate that the sensor based on porous GaN exhibits high sensitivity and good selectivity to ethanol, which also shows a fast response/recovery time. Furthermore, the sensor presents excellent stability at high temperature of 360 °C. Our study provides a promising route for the fabrication of porous GaN-based sensitive materials for gas sensors with high-performance.
© 2019 IEEE.

GaN porous nanorods hydrothermal gas sensor

第一 ; 通讯

英语

EI ; CPCI-S

Shenzhen Science and Technology Innovation Committee[JCYJ20170412154426330][KQTD2015071710313656]

WOS:000539487000345

20193707425524

Actuators ; Chemical sensors ; Gallium nitride ; Gas detectors ; Gases ; III-V semiconductors ; Microsystems ; Nanorods

Control Equipment:732.1 ; Control Instrumentation:732.2 ; Nanotechnology:761 ; Chemistry:801 ; Accidents and Accident Prevention:914.1 ; Solid State Physics:933

EV Compendex

1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
2.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
3.GaN Device Engineering Technology Research Center of Guangdong, Southern University of Science and Technology, Shenzhen, China
4.Shenzhen Key Laboratory of 3rd Generation Semiconductor Devices, Shenzhen, China
5.State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai; 200050, China

Zhang, Mingxiang,Zhao, Changhui,Gong, Huimin,et al. High Sensitivity Gas Sensor Based on Porous GaN Nanorods with Excellent High-Temperature Stability[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:Institute of Electrical and Electronics Engineers Inc.,2019:1369-1372.